JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS21/A/C/S
FEATURES
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
SOT-23
SWITCHING DIODE
BAS21
Marking: JS
BAS21A
Marking:JS2
BAS21C
Marking:JS3
BAS21S
Marking: JS4
Maximum Ratings @Ta=25℃
Parameter
Repetitive peak reverse voltage
Working
peak
reverse voltage
DC
blocking voltage
Forward
continuous current
Average
rectified output current
Non-repetitive
peak forward surge current
Repetitive
peak forward surge current
Power
dissipation
Thermal
resistance junction
to
ambient
Junction temperature
Storage temperature range
@ t = 1.0µs
@ t = 1.0s
Symbol
V
RRM
V
RWM
V
R
I
FM
I
O
I
FSM
I
FRM
P
D
R
θJA
T
J
T
STG
400
200
2.5
0.5
625
225
55
150
-55~+150
mA
mA
A
mA
mW
℃/W
℃
℃
250
V
Limit
Unit
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
Test
I
R
= 100µA
V
R
=200V
I
F
=100mA
I
F
=200mA
V
R
=0V, f=1MHz
I
F
=I
R
=30mA,I
rr
=0.1×I
R,
R
L
=100Ω
conditions
Min
250
1
1000
1250
5
50
Max
Unit
V
µA
mV
pF
ns
A,Jun,2011
Typical Characteristics
1000
BAS21/A/C/S
1000
Forward
Characteristics
Reverse
Characteristics
(mA)
(nA)
o
C
100
T=
a
1
00
T
a
=100 C
100
o
I
F
FORWARD CURRENT
1
T=
a
2
5
10
REVERSE CURRENT I
R
o
C
10
T
a
=25 C
o
0.1
0.01
0.0
0.4
0.8
1.2
1.6
2.0
1
0
40
80
120
160
200
FORWARD VOLTAGE
V
F
(V)
REVERSE VOLTAGE
V
R
(V)
1.6
Capacitance Characteristics
T
a
=25
℃
f=1MHz
Power Derating Curve
300
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
(mW)
P
D
POWER DISSIPATION
20
1.4
250
200
1.2
150
1.0
100
0.8
50
0.6
0
4
8
12
16
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Jun,2011
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