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BAS21WT/R13

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-3

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
R-PDSO-G3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.2 W
认证状态
Not Qualified
最大重复峰值反向电压
250 V
最大反向恢复时间
0.05 µs
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
DATA SHEET
BAS19W~BAS21W
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Fast switching speed.
• Surface mount package Ideally Suited for Automatic insertion
• Electrically Identical to Standard JEDEC
• High Conductance
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.087(2.20)
0.070(1.80)
120-250 Volts
POWER
200mWatts
SOT-323
Unit
inch(mm)
0.004(0.10)MIN.
0.044(1.10)
0.035(0.90)
MECHANICAL DATA
Case: SOT-323, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight:
0.00 gram
0.004(0.10)MAX.
0.016(0.40)
0.008(0.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.
P A R A M E TE R
M a rki g C o d e
n
R e ve rse V o l a g e
t
P e a k R e ve rse V o l a g e
t
R e ct f e d C urre nt (A ve ra g e ), H a l W a ve R e ct f ca t o n w i h
ii
f
ii i
t
R e si t ve L o a d a nd f > = 5 0 H z
si
P e a k F o rw a rd S urg e C urre nt 1 . us
, 0
P o w e r D i si a t o n D e ra t A b o ve 2 5
O
C
s p i
e
M a xi um F o rw a rd V o l a g e a t 0 . A
m
t
1
M a xi um D C R e ve rse C urre nt a t R a t d D C B l cki g V o l a g e
m
e
o
n
t
T
J
= 2 5
O
C
Typ i a l Junct o n C a p a ci a nce ( N o t s1 )
c
i
t
e
M a xi um R e ve rse R e co ve ry (N o t s2 )
m
e
Typical
Th e rm a l R e si t nce
sa
V
R
V
RM
I
O
I
SM
F
P
TO T
V
F
I
R
C
J
T
R R
R
θ
JA
T
J
, T
S TG
S YM B O L
B A S 19W
A8
100
120
B A S 20W
A 80
150
200
200
4.0
200
1.
0
0.
1
5.
0
50
625
-5 5 t + 1 5 0
o
O
B A S 21W
A 82
200
250
0.087(2.20)
0.078(2.00)
UNI S
T
V
V
mA
A
mW
V
uA
pF
ns
C /W
O
O p e ra t ng Junct o n a nd S t ra g e Te m p e ra t re R a ng e
i
i
o
u
C
SINGLE
NOTE:
1. CJ at V
R
=0, f=1MHZ
2.From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
1
3
2
REV.0.1-FEB.11.2009
PAGE . 1
1000
100
T
J
=25
O
C
100
I
R
, LEAKAGE CURRENT, uA
FORWARD CURRENT, mA
10
10
1.0
1.0
0.1
0.1
0.01
0
1.0
2.0
0.01
0
100
O
200
FORWARD VOLTAGE, VOLTS
T
J
, JUNCTION TEMPERATURE, C
Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE
FIG. 1-TYPICAL FORWARD CHARACTERISTIC
4.5
P
D
,
POWER DISSIPATION (mW)
6.0
400
DIODE CAPACITANCE, pF
300
3.0
200
1.5
100
0
0
2
4
6
8
0
50
100
150
O
200
REVERSE VOLTAGE, VOLTS
AMBIENT TEMPERATURE( C)
FIG. 4 POWER DERATING CURVE
FIG. 3 TYPICAL JUNCTION CAPACITANCE
REV.0.1-FEB.11.2009
PAGE . 2
MOUNTING PAD LAYOUT
SOT-323
0.026
(0.66)
Unit
inch(mm)
0.034
(0.86)
0.026
(0.65)
0.026
(0.65)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-FEB.11.2009
0.073
(1.85)
PAGE . 3
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