DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Diodes
SOT-23
BAS40/-04/-05/-06
FEATURES
Low Forward Voltage
Fast Switching
SCHOTTKY
BARRIER
DIODE
BAS40 MARKING: 43•
BAS40-06 MARKING: 46
BAS40-05 MARKING：45
BAS40-04 MARKING：44
Maximum Ratings @Ta=25℃
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature range
Symbol
V
RRM
V
RWM
V
R
I
FM
P
D
R
θJA
T
J
T
STG
200
200
500
125
-55~+150
mA
mW
℃/W
℃
℃
40
V
Limit
Unit
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
Test
I
R
= 10
μ
A
V
R
=30V
I
F
=1mA
I
F
=40mA
V
R
=0,f=1MHz
I
rr
=1mA, I
R
=I
F
=10mA
R
L
=100Ω
conditions
Min
40
200
380
1000
5
5
Max
Unit
V
nA
mV
pF
ns
1/2
Typical Characteristics
Forward Characteristics
100
10
100
BAS40/-04/-05/-06
Reverse
Characteristics
Ta=100
℃
(mA)
Ta=100
℃
10
REVERSE CURRENT I
R
I
F
(uA)
1
FORWARD CURRENT
Ta=25
℃
0.1
1
0.01
Ta=25
℃
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1E-3
0
10
20
30
40
FORWARD VOLTAGE
V
F
(V)
REVERSE VOLTAGE
V
R
(V)
4.0
Capacitance Characteristics
Ta=25
℃
f=1MHz
0.25
Power Derating Curve
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
3.5
0.20
P
D
POWER DISSIPATION
0
5
10
15
20
25
30
0.15
0.10
0.05
0.00
3.0
2.5
2.0
1.5
1.0
(W)
0
25
50
75
100
125
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
J
(
℃
)
2/2
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