JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS70/-04/-05/-06
SWITCHING DIODE
SOT-23
FEATURES
Low
turn-on
voltage
Fast switching
Also available in lead free version
BAS70 Marking: 73
BAS70-04 Marking: 74
BAS70-05 Marking: 75
BAS70-06 Marking: 76
MAXIMUM RATINGS @Ta=25
℃
Symbol
V
R
I
F
P
D
T
J
T
stg
DC Voltage
Forward Continuous Current
Power
Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
70
70
200
150
-55~+150
Unit
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
Test
I
R
= 10µA
V
R
=50V
I
F
=1mA
I
F
=15mA
V
R
=0V f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1xI
R
,
R
L
=100Ω
conditions
Min
70
120
410
1000
2
5
Max
Unit
V
nA
mV
pF
ns
A,May,2011
Typical Characteristics
100
BAS70/-04/-05/-06
10
Forward
Characteristics
Reverse
Characteristics
(mA)
10
C
o
(uA)
T
a
=100 C
1
o
I
F
=1
00
FORWARD CURRENT
T=
a
2
5
o
C
1
REVERSE CURRENT I
R
T
a
0.1
0.1
T
a
=25 C
o
0.01
0.0
0.01
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
FORWARD VOLTAGE
V
F
(V)
REVERSE VOLTAGE
V
R
(V)
Capacitance Characteristics
4
300
Power Derating Curve
T
a
=25
℃
f=1MHz
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
(mW)
P
D
POWER DISSIPATION
20
250
3
200
2
150
100
1
50
0
0
5
10
15
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,May,2011
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