JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAS70BRW /BAS70DW-04 /
SOT-363
BAS70DW-05 /BAS70DW-06 /BAS70TW
SCHOTTKY BARRIER DIODE ARRAYS
FEATURES
Low Forward Voltage Drop
Fast Switching
Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Available in Lead Free Version
MARKING:
BAS70BRW
MARKING: K75
BAS70DW-04
MARKING: K74
BAS70DW-05
MARKING: K71
BAS70DW-06
MARKING:K76
BAS70TW
MARKING: K73
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Parameter
Repetitive Peak Reverse Voltage
Peak Working Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-repetitive Peak Forward Surge Current @t≤1s
Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
49
70
100
200
500
125
-55~+150
V
mA
mA
mW
℃/W
℃
℃
70
V
Value
Unit
A,Sep,2010
ELECTRICAL CHARACTERISTICS(T
a
=25
℃
unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
V
(BR)
I
R
V
F
C
tot
t
rr
I
R
=10μA
V
R
=50V
I
F
=1mA
I
F
=15mA
V
R
=0V,f=1MHz
I
F
=I
R
=10mA to I
R
=1mA,I
rr
=0.1×I
R
, R
L
=100Ω
Test conditions
Min
70
0.1
0.41
1
2
5
Typ
Max
Unit
V
μA
V
pF
ns
A,Sep,2010
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