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BAV199STB6T/R7

Rectifier Diode, 4 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
R-PDSO-F6
针数
6
Reach Compliance Code
compliant
配置
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-F6
元件数量
4
端子数量
6
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.2 W
认证状态
Not Qualified
最大重复峰值反向电压
100 V
最大反向恢复时间
3 µs
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BAV199STB6
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES ARRAY
VOLTAGE
FEATURES
• Two isolated diode pairs for significant board space savings
• Surface mount package ideally suited for automatic insertion
• Very low leakage current. 5nA typical at V
R
=75V.
• Low capacitance. 2pF max at V
R
=0V, f=1MHz
• In compliance with EU RoHS 2002/95/EC directives
100 Volts
POWER
200mWatts
SOT-563
MECHANICAL DATA
• Case: SOT-563 plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx weight: 0.003gram
• Marking: TF
ABSOLUTE RATINGS (each diode)
P arameter
M a xi m um R e ve r s e Vo l t a g e
P e a k R e ve r s e Vo l t a g e
C o nti nuo us F o r wa r d C ur r e nt
N o n- r e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt a t t = 1 . 0 us
S ym b o l
V
R
V
RM
I
I
Va lue
100
100
0.2
2.0
Uni ts
V
V
A
A
F
FSM
THERMAL CHARACTERISTICS
Parameter
Power D i ssi pati on (Note 1)
Thermal Resi stance, Juncti on to Ambi ent (Note 1)
Juncti on Temperature
Storage Temperature
Symbol
P
TOT
JA
T
J
T
STG
Value
200
625
-55 to 150
-55 to 150
Uni ts
mW
O
C /W
O
C
C
O
NOTE:
1. FR-4 Board = 70 x 60 x 1mm.
REV.0.0-FEB.9.2009
PAGE . 1
BAV199STB6
ELECTRICAL CHARACTERISTICS (each diode) (T
A
=25
O
C, unless otherwise noted)
PARAMETER
Reverse Breakdown Voltage
Reverse Current
Symbol
V
(BR)
I
R
Test Condition
I
R
=100 uA
V
R
=75 V
V
R
=75 V,T
J
=150
O
C
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0 V, f=1MH
Z
I
F
=I
R
=10mA, R
L
=100
MIN.
TYP.
MAX.
100
5
80
0.9
1.0
1.1
1.25
2.0
3.0
Units
V
nA
Forward Voltage
V
F
V
Total Capacitance
Reverse Recovery Time
C
T
T
RR
pF
us
CHARACTERISTIC CURVES (each diode)
I
R
, Reverse Leakage (nA)
10
V
R
=25V
1
I
F
, Forward Current (mA)
1000
100
T
A
=150
o
C
10
T
J
=-25
o
C
0.1
T
A
=75
o
C
0.01
1
T
A
=25
o
C
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, Forward Voltage (V)
1.2
0.001
0
50
100
150
T
J
, Junction Temperature (Deg C)
200
Figure 1. Reverse Leakage vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
1.4
C
T
, Total Capacitance (pF)
1.2
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
100
f=1MHz
V
R
, Reverse Voltage (V)
Figure 3. Total Capacitance vs. Reverse Voltage
REV.0.0-FEB.9.2009
PAGE . 2
BAV199STB6
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 4K per 7" plastic Reel
T/R - 10K per 13" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.0-FEB.9.2009
PAGE . 3
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