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BAV19WS_08

0.2 A, 100 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

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BAV19WS~BAV21WS
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Fast switching speed.
.054(1.35)
.045(1.15)
.078(1.95)
.068(1.75)
120-250 Volts
POWER
200mWatts
SOD-323
Unit: inch (mm)
.014(.35)
• Surface mount package Ideally Suited for Automatic insertion
• Electrically Identical to Standard JEDEC
• High Conductance
.009(.25)
.038(.95)
.027(.70)
.006(.15)
.107(2.7)
.090(2.3)
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOD-323, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
.012(.30)MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.
PA RA M E TE R
M a r k i ng C o d e
R e ve r s e V o l t a g e
P e a k R e ve r s e V o l t a g e
R e c t i f i e d C ur r e nt ( A ve r a g e ) , H a l f Wa ve R e c t i f i c a t i o n w i t h
R e s i s t i ve L o a d a nd f > 5 0 H z
P e a k F o r w a r d S ur g e C ur r e nt , 0 . 0 0 1 m s
P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5
O
C
M a xi m um F o r w a r d V o l t a g e a t 0 . 1 A
M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng V o l t a g e
T
J
= 2 5
O
C
Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e s 1 )
M a xi m um R e ve r s e R e c o ve r y ( N o t e s 2 )
M a xi m um The r m a l R e s i s t a nc e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
B AV 1 9 W S
A8
B AV 2 0 W S
A80
150
200
200
4
200
1 .0
0 .1
5 .0
50
640
-5 5 to +1 5 0
.002(.05)
B AV 2 1 W S
A82
200
250
U N IT S
V
R
V
RM
I
I
O
100
120
V
V
mA
A
mW
V
µ
A
pF
ns
O
FSM
P
TOT
V
F
I
R
C
J
T
RR
R
θ
J A
T
J
,T
S TG
C / W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2.From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
STAD-APR.17.2008
PAGE . 1
BAV19WS~BAV21WS
1000
100
T
J
=25
O
C
100
I
R
, LEAKAGE CURRENT, uA
FORWARD CURRENT, mA
10
10
1.0
1.0
0.1
0.1
0.01
0
1.0
2.0
0.01
0
100
O
200
FORWARD VOLTAGE, VOLTS
T
J
, JUNCTION TEMPERATURE, C
Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE
FIG. 1-TYPICAL FORWARD CHARACTERISTIC
4.5
P
D
,
POWER DISSIPATION (mW)
6.0
400
DIODE CAPACITANCE, pF
300
3.0
200
1.5
100
0
0
2
4
6
8
0
50
100
150
200
REVERSE VOLTAGE, VOLTS
AMBIENT TEMPERATURE(
O
C)
FIG. 4 POWER DERATING CURVE
FIG. 3 TYPICAL JUNCTION CAPACITANCE
STAD-APR.17.2008
PAGE . 2
BAV19WS~BAV21WS
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 5K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-APR.17.2008
PAGE . 3
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