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BAV21-35T/B

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
DO-35
包装说明
ROHS COMPLIANT, GLASS PACKAGE-2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-35
JESD-30 代码
O-LALF-W2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.2 A
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
250 V
最大反向恢复时间
0.05 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BAV19~BAV21
SWITCHING DIODES
VOLTAGE
120~250 Volts
POWER
500 mWatts
DO-35
Unit
inch(mm)
FEATURES
Fast switching Speed.
Electrically ldentical to Standerd JEDEC
High Conductance
Axial lead Package ldeally Suited for Automatic lnsertion.
In compliance with EU RoHS 2002/95/EC directives
1.02(26.0)MIN.
0.022(0.55)
0.018(0.45)
MECHANICAL DATA
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Ordering information: Suffix : “ -35 ” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 15" plastic Reel
T/B - 5K per horiz. tape & Ammo box
1.02(26.0)MIN.
0.141(3.6)
0.118(3.0)
• Mounting Position: Any
0.087(2.2)
0.067(1.7)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PA RA M E TE R
R e ve r s e V o l t a g e
P e a k R e ve r s e V o l t a g e
R e c t i f i e d C ur r e nt ( A ve r a g e ) , H a l f Wa ve R e c t i f i c a t i o n w i t h R e s i s t i ve
L o a d a nd f > = 5 0 H z
P e a k F o r w a r d S ur g e C ur r e nt , 1 . 0 s
P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5
O
C
M a xi m um F o r w a r d V o l t a g e a t 0 . 1 A
M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 2 5
O
C
Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e s 1 )
M a xi m um R e ve r s e R e c o ve r y ( N o t e s 2 )
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
R
V
RM
I
F ( A V )
I
F S M
P
to t
V
F
I
R
C
J
t
rr
R
θ
J A
T
J
, T
S T G
B AV 1 9
100
120
B AV 2 0
150
200
200
1 .0
500
1 .0
0 .1
3 .0
50
350
-5 5 to +1 5 0
B AV 2 1
200
250
U N IT S
V
V
mA
A
mW
V
µ
A
pF
ns
O
C / W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2. From I
F
=30mA to I
R
=-3mA, V
R
=6Volts, R
L
=100Ω
STAD-FEB.06.2009
1
PAGE . 1
BAV19~BAV21
RATING A ND CHA RA CTERISTIC CURVES
A
10
2
I
v=tp / T T=1/fp
tp
I
FRM
T
t
I
FRM
10
1
V=0
V=0.1
V=0.2
V=0.3
10
0
10
10
-5
-1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
S
tp
Fi g .1 A DMISSIB L E REPETITIVE PEA K FORWA RD CURRENT VERSUS PUL SE DURATION
10
4
T
J
=25
O
C
f=1KHz
10
3
100
FORWARD CURRENT, mA
FORWARD RESISTANCE,
10
10
2
-25 C
25 C
O
O
10
1
1.0
75
O
C
T
A
=125 C
O
10
0
10
-2
0.2
10
-1
10
0
10
1
10
2
0
.4
.8
1.2
1.6
FORWARD CURRENT, mA
FORWARD VOLTAGE, VOLTS
Fi g .2-DYNA MIC FORWA RD RESISTA NCE
VERSUS FORWA RD CURRENT
F i g . 2 FORWARD CHARACTERISTICS
POWER DISSIPATION, mW
3.5
500
T
J
=25
O
C
f=1KHz
300
CAPACITANCE, pF
100
200
2.8
2.1
1.4
100
0.7
0
0
2
4
6
8
1.0
AMBIENT TEMPERATURE,
O
C
REVERSE VOLTAGE, VOLTS
Fi g .4 DERATING CURVE
Fi g .5 TYPICA L J UNCTION CA PACITA NCE
STAD-FEB.06.2009
1
PAGE . 2
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