Plastic- Encapsulate Diodes
SWITCHING DIODE
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
BAW56/BAV70/BAV99
MARKING:
SOT-23
BAW56:A1
BAV70:A4
BAV99:A7
MAXIMUM RATINGS (TA=25
Parameter
Reverse voltage
Forward Current
Peak Forward Surge Current
Power Dissipation
unless otherwise noted)
Symbol
V
R
I
F
IFM(surge)
P
D
R
θJ
A
T
J
TST
G
Limit
s
70
0
200
0
500
0
0
225
0
2
556
5
5
150
6
5
-55-150
0
50
Unit
V
mA
mA
mW
/W
Thermal Resistance Junction to Ambient Air
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Reverse Breakdown Voltage
Symbol
VR
VF1
Forward voltage
VF2
VF3
VF4
Reverse current
Capacitance between terminals
Reverse recovery time
IR
CT
t rr
unless otherwise specified)
Min.
70
0.715
0.855
1
1.25
2.5
1.5
6
Typ.
Max.
Unit
V
V
V
V
V
μA
pF
ns
Conditions
IR=100μA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=70V
VR=0,f=1MHz
IF = IR = 10mA,
Irr= 0.1 x IR, RL = 100Ω
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic- Encapsulate Diodes
BAW56/BAV70/BAV99
Typical Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
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