JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-523 Plastic-Encapsulate Diodes
BAW56T/BAV70T/BAV99T
SOT-523
SWITCHING DIODE
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
Maximum Ratings @Ta=25℃
Parameter
Reverse voltage
Forward current
Forward power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
O
P
D
T
j
T
stg
Limit
85
75
150
150
-55~+150
Unit
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Symbol
V
(BR)
I
R1
Reverse voltage leakage current
I
R2
V
R
=25V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0
f=1MHz
0.03
715
855
1000
1250
1.5
4
μA
I
R
= 1μA
V
R
=75V
Test
conditions
Min
85
2
Max
Unit
V
μA
Forward voltage
V
F
mV
Diode capacitance
Reverse recovery time
C
D
t
rr
pF
ns
I
F
=I
R
=10mA
I
rr
=0.1×I
R,
R
L
=100Ω
A,May,2011
电子工程世界
