BAV99
Silicon Epitaxial Planar Switching Diode
Fast switching in thick and thin-film circuits diode
3
1
2
Marking Code:
A7
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous F
orward Current (Double Diode Loaded)
Continuous F
orward Current (Single Diode Loaded)
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms
at t = 1
μs
Symbol
V
RRM
V
R
I
F
I
F
I
FRM
I
FSM
P
tot
T
j
T
stg
Value
85
75
125
215
450
0.5
1
4.5
350
150
- 65 to + 150
Unit
V
V
mA
mA
mA
A
mW
O
Power Dissipation
Junction Temperature
Storage Temperature Range
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Reverse Current
at V
R
= 25 V
at V
R
= 75 V
at V
R
= 25 V, T
j
= 150
O
C
at V
R
= 75 V, T
j
= 150
O
C
Diode Capacitance
at V
R
= 0 , f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
R
= 1 mA, R
L
= 100
Ω
Symbol
Max.
0.715
0.855
1
1.25
30
1
30
50
1.5
4
Unit
V
F
V
I
R
nA
µA
µA
µA
pF
ns
C
d
t
rr
BAV99
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