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BAV99

反向恢复时间(trr):6ns 直流反向耐压(Vr):70V 平均整流电流(Io):200mA 正向压降(Vf):1.25V @ 150mA

器件类别:分立半导体    开关二极管   

厂商名称:台湾美丽微(FMS)

厂商官网:http://www.formosagr.com/

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器件参数
参数名称
属性值
反向恢复时间(trr)
6ns
直流反向耐压(Vr)
70V
平均整流电流(Io)
200mA
正向压降(Vf)
1.25V @ 150mA
文档预览
SMD Switching Diode
BAL99/BAV99/BAW56/BAV70
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Thermal Characteristics ................................................................... 3
Electrical Characteristics.................................................................. 3
Rating and characteristic curves........................................................ 4
Pinning information...........................................................................5
Marking........................................................................................... 5
Suggested solder pad layout............................................................. 5
Packing information.......................................................................... 6
Reel packing.................................................................................... 7
Suggested thermal profiles for soldering processes............................. 7
High reliability test capabilities...........................................................8
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/11/29
Revision
C
Page.
8
Page 1
DS-221906
SMD Switching Diode
BAL99/BAV99/BAW56/BAV70
225mW Surface Mount
Switching Diode- 70V
Features
Fast speed switching.
For general purpose switching application.
High conductance.
Silicon epitaxial planar chip.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen-free part, ex.BAL99-H.
Formosa MS
Package outline
SOT-23
0.045 (1.15)
0.034 (0.85)
0.020 (0.50)
(C)
0.120 (3.04)
0.110 (2.80)
.084(2.10)
.068(1.70)
(B)
(A)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, SOT-23
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.007 (0.18)
0.012 (0.30)
0.003 (0.09)
0.051 (1.30)
0.035 (0.89)
Mounting Position : Any
Weight : Approximated 0.008 gram
Dimensions in inches and (millimeters)
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Reverse Voltage
Forward Current
Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
@ t=1.0us
@ t=1.0s
SYMBOL
BAL99
BAV99
70
215
500
2.0
1.0
BAW56
BAV70
UNIT
V
V
R
I
F
I
FM
I
FSM
100
200
mA
mA
A
Thermal Characteristics
PARAMETER
Total Device Dissipation FR-5
Board* , T
A
= 25 C
Derate Above 25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina
Substrate* , T
A
= 25 C
Derate Above 25 C
Thermal Resistance Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
O
2
O
O
1
O
SYMBOL
MAX.
225
1.8
UNIT
mW
mW/
O
C
O
P
D
R
θJA
P
D
R
θJA
T
J
T
STG
556
300
2.4
417
-55 ~ +150
-55 ~ +150
C/W
mW
mW/
O
C
O
C/W
o
C
C
o
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/11/29
Revision
C
Page.
8
Page 2
DS-221906
SMD Switching Diode
BAL99/BAV99/BAW56/BAV70
Electrical Characteristics
(AT T =25 C unless otherwise noted)
o
A
Formosa MS
MIN.
70
2.5
30
60
50
100
MAX.
UNIT
V
PARAMETER
Reverse Breakdown Voltage(I
BR
=100uAdc)
Reverse Voltage Leakage Current
O
(at V
R
= 70V, T
J
=25
C)BAL99/BAV99/BAW56/BAV70
(at V
R
= 25V, T
J
=150
O
C)BAL99/BAV99/BAW56
O
(at V
R
= 25V, T
J
=150
C)BAV70
O
(at V
R
= 70V, T
J
=150 C)BAL99/BAV99/BAW56
(at V
R
= 70V, T
J
=150
O
C)BAV70
Diode Capacition(V
R
= 0V, f = 1.0MHz)
BAL99/BAV99/BAV70
BAW56
Reverse Recovery Time(I
F
= I
R
= 10mA,V
R
= 5.0Vdc,
I
R
(REC) = 1.0mAdc, R
L
= 100
OHM
)
Forward Voltage
(at I
F
= 1.0mAdc)
(at I
F
= 10mAdc)
(at I
F
= 50mAdc)
(at I
F
= 150mAdc)
SYMBOL
V
BR
I
R
µA
C
D
1.5
2.0
6.0
715
855
1000
1250
pF
t
rr
ns
V
F
mV
Recovery Time Equivalent Test Circuit
820 OHM
+10V
2K
100uH
0.1 uF
I
F
t
rr
t
I
F
t
r
t
p
10%
t
0.1 uF
50 OHM OUTPUT
PULSE
GENERATOR
DUT
50 OHM INPUT
SAMPLING
OSCILLOSCOPE
90%
V
R
I
R
IR(REC)=1 mA
OUTPUT PULSE
(IF=IR=10mA;measured
at IR(REC)=1mA)
Notes :
1. A2.0 Kohm variable resistor adjusted for a forward Current (IF) of 10mA.
Notes:
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp >> trr.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/11/29
Revision
C
Page.
8
Page 3
DS-221906
Rating and characteristic curves for each diode (BAL99/BAV99/BAW56/BAV70)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,(mA)
FIG.2 - TYPICAL REVERSE
CHARACTERISTICS
T
J
=150°C
REVERSE CURRENT, (uA)
T
J
=125°C
T
J
=85°C
T
J
=85°C
T
J
=25°C
T
J
=55°C
T
J
=-40°C
T
J
=25°C
FORWARD VOLTAGE,(V)
REVERSE VOLTAGE,(V)
FIG.3a - TYPICAL DIODE CAPACITANCE
BAL99/BAV99/BAV70
FIG.3b - TYPICAL DIODE CAPACITANCE
BAW56
DIODE CAPACITANCE,(pF)
REVERSE VOLTAGE,(V)
DIODE CAPACITANCE,(pF)
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/11/29
Revision
C
Page.
8
Page 4
DS-221906
SMD Switching Diode
BAL99/BAV99/BAW56/BAV70
Pinning information
Type number
BAL99
Marking code
L4, A6,JF
(C)
(A)
(B)
Formosa MS
Symbol
A
B
Simplified outline
(A)
(B)
C
A
B
BAV99
JG, A7
(C)
(A)
(B)
C
A
B
BAW56
JC, A1
(C)
(A)
(B)
C
A
B
BAV70
JA, A4
(C)
C
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/11/29
Revision
C
Page.
8
Page 5
DS-221906
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