DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Diodes
BAW56/BAV70/BAV99
SOT-23
SWITCHING DIODE
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
BAW56 Marking: A1
BAV70 Marking: A4
BAV99 Marking: A7
Maximum Ratings @Ta=25℃
Parameter
Reverse Voltage
Forward Current
Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
R
I
F
I
FM(surge)
P
D
R
θJA
T
J
T
STG
Limit
70
200
500
225
556
150
-55~+150
Unit
V
mA
mA
mW
℃/W
℃
℃
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Symbol
V
R
V
F1
Forward voltage
V
F2
V
F3
V
F4
Reverse current
Capacitance between terminals
Reverse recovery time
I
R
C
T
t
rr
Min
70
0.715
0.855
1
1.25
2.5
1.5
6
Typ
Max
Unit
V
V
V
V
V
μA
pF
ns
Conditions
I
R
=100μA
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=70V
V
R
=0,f=1MHz
I
F
= I
R
= 10mA,
Irr= 0.1 x I
R
, R
L
= 100Ω
A,May,2011
Typical Characteristics
Forward
300
BAW56/BAV70/BAV99
Reverse
Characteristics
Characteristics
1000
100
300
(mA)
(nA)
Ta
=1
00
℃
30
Ta=100
℃
100
I
F
FORWARD CURRENT
10
REVERSE CURRENT I
R
Ta
=2
5
℃
30
3
10
Ta=25
℃
1
0.3
3
0.1
0.0
1
0.4
0.8
1.2
1.6
0
20
40
60
80
FORWARD VOLTAGE
V
F
(V)
REVERSE VOLTAGE
V
R
(V)
Capacitance Characteristics
1.4
300
Power Derating Curve
Ta=25
℃
f=1MHz
250
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
1.3
(mW)
POWER DISSIPATION
P
D
200
150
100
1.2
1.1
50
1.0
0
5
10
15
20
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
Ta
(
℃
)
A,May,2011
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