JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC327/ BC328
FEATURES
Power dissipation
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
BC327
BC328
BC327
BC328
Value
-50
-30
-45
-25
-5
-800
625
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
TRANSISTOR (PNP)
TO-92
1. COLLECTOR
2.BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC327
BC328
Collector-emitter breakdown voltage
BC327
BC328
Emitter-base breakdown voltage
Collector cut-off current
BC327
BC328
Collector cut-off current
BC327
BC328
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
V
CE
= -40 V , I
B
=0
V
CE
= -20 V , I
B
=0
V
EB
= -4 V ,
V
CE
=-1 V,
V
CE
=-1 V,
I
C
=0
I
C
= -100mA
I
C
= -300mA
100
40
-0.7
-1.2
-1.2
260
12
V
V
V
MHz
pF
-0.2
-0.2
-0.1
630
uA
uA
I
CBO
V
CB
= -45 V , I
E
=0
V
CB
= -25V , I
E
=0
-0.1
-0.1
uA
Symbol
V
CBO
I
C
= -10mA ,
V
CEO
V
EBO
I
E
= -10uA, I
C
=0
I
B
=0
-45
-25
-5
V
V
Test
conditions
Min
-50
-30
Typ
Max
Unit
V
I
C
= -100uA, I
E
=0
I
C
=-500mA, I
B
= -50mA
I
C
= -500mA, I
B
=-50mA
V
CE
=-1 V, I
C
= -300mA
V
CE
= -5V, I
C
= -10mA
f =
100MHz
V
CB
=-10V,I
E
=0
f=1MHZ
f
T
Cob
CLASSIFICATION
OF
h
FE
Rank
Range
16
100-250
25
160-400
40
250-630
B,Feb,2012
Typical Characterisitics
Static Characteristic
-300
BC327/BC328
h
FE
1000
—— I
C
-1.0mA
-0.9mA
-0.8mA
-0.7mA
COMMON
EMITTER
T
a
=25
℃
T
a
=100
℃
(mA)
h
FE
I
C
-200
-0.6mA
-0.5mA
-0.4mA
T
a
=25
℃
COLLECTOR CURRENT
DC CURRENT GAIN
100
-100
-0.3mA
-0.2mA
I
B
=-0.1mA
COMMON EMITTER
V
CE
= -1V
10
-6
-7
-10
-100
-800
-0
-0
-2
-4
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1
V
CEsat
——
I
C
-2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-1
T
a
=25
℃
-0.1
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β=10
-0.01
-0.3
-1
-10
-100
-800
-0.1
-1
-10
-100
β=10
-800
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
-800
—— V
BE
1000
f
T
——
I
C
(mA)
-100
I
C
-10
TRANSITION FREQUENCY
COLLECTOR CURRENT
T=
a
10
0
℃
T=
a
25
℃
f
T
100
-1
(MHz)
COMMON EMITTER
V
CE
=-1V
-0.1
-0.0
-0.3
-0.6
-0.9
-1.2
COMMON EMITTER
V
CE
=-5V
T
a
=25
℃
10
-5
-10
-100
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
COLLECTOR POWER DISSIPATION
P
C
(mW)
700
P
C
——
T
a
C
ib
(pF)
T
a
=25
℃
600
500
C
C
ob
10
400
CAPACITANCE
300
200
100
1
-0.1
-1
-10
-20
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Feb,2012
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