JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC556/BC557/BC558
TRANSISTOR (PNP)
TO-92
FEATURES
High Voltage
Complement to BC546/BC547/BC548
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
Parameter
Collector-Base Voltage
BC556
BC557
BC558
Value
-80
-50
-30
-65
-45
-30
-5
-100
625
150
-55-150
Unit
V
1. COLLECTOR
2. BASE
3. EMITTER
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC556
BC557
BC558
BC556
BC557
BC558
Symbol
V
CBO
Test
conditions
Min
-80
-50
-30
-65
-45
-30
-5
-0.1
Typ
Max
Unit
V
I
C
= -100μA, I
E
=0
Collector-emitter breakdown voltage
V
CEO
V
EBO
I
CBO
I
C
= -2mA , I
B
=0
I
E
= -100μA, I
C
=0
V
CB
=- 70 V, I
E
=0
V
CB
= -45 V, I
E
=0
V
CB
= -25V, I
E
=0
V
CE
= -60 V, I
B
=0
V
CE
= -40 V, I
B
=0
V
CE
= -25 V, I
B
=0
V
EB
= -5 V, I
C
=0
V
V
μA
Emitter-base breakdown voltage
Collector cut-off current
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC557A
BC556B/BC557B/BC558B
BC557C
Collector cut-off current
I
CEO
-0.1
μA
Emitter cut-off current
I
EBO
-0.1
120
120
120
120
180
420
800
800
800
220
460
800
-0.65
-1
150
μA
DC current gain
h
FE
V
CE
=-5V, I
C
= -2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
I
C
=-100mA, I
B
= -5mA
I
C
= -100mA, I
B
=-5mA
V
CE
= -5V, I
C
= -10mA
f =
100MHz
V
V
MHz
Transition frequency
A,May,2011
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