BC636...BC640
PNP Silicon Epitaxial Planar Transistor
Medium Power Transistors
for audio and video amplifiers
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
BC636
BC638
BC640
BC636
BC638
BC640
Symbol
-V
CBO
Value
45
60
100
45
60
80
5
1
1.5
100
200
830
150
- 65 to + 150
Unit
V
Collector Emitter Voltage
-V
CEO
-V
EBO
-I
C
-I
CM
-I
B
-I
BM
P
tot
T
j
T
stg
V
V
A
A
mA
mA
mW
O
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
C
C
O
BC636...BC640
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 2 V, -I
C
= 5 mA
at -V
CE
= 2 V, -I
C
= 150 mA
at -V
CE
= 2 V, -I
C
= 500 mA
Collector Base Cutoff Current
at -V
CB
= 30 V
Emitter Base Cutoff Current
at V
EB
= 5 V
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Symbol
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
BC636
BC638
BC640
BC636
BC638
BC640
Min.
40
63
100
25
-
-
45
60
100
45
60
80
5
-
-
100
Max.
-
160
250
-
100
100
-
-
-
-
-
-
-
0.5
1
-
Unit
-
-
-
-
nA
nA
Current Gain Group -10
-16
-V
(BR)CBO
V
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
-V
(BR)CEO
V
Emitter Base Breakdown Voltage
at -I
E
= 10 µA
Collector Emitter Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
Base Emitter Voltage
at -V
CE
= 2 V, -I
C
= 500 mA
Gain Bandwidth Product
at -V
CE
= 5 V, -I
C
= 50 mA, f = 100 MHz
-V
(BR)EBO
-V
CE(sat)
-V
BE
f
T
V
V
V
MHz
BC636...BC640
电子工程世界
