Plastic-Encapsulate Transistors
FEATURES
Ldeally suited for automatic insertion
epitaxial planar die construction
complementary NPN type available(BC817)
Marking
BC807-16 BC807-25 BC807-40
5A
5B
5C
BC807-16
(PNP)
BC807-25
(PNP)
BC807-40
(PNP)
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance Junction to Ambient
Symbol
V
CBO
V
CEO
V
EBO
I
C
PC
T
J
Tstg
Value
-50
-45
-5
-500
300
150
-55 to +150
417
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
R
θJA
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
807-16
807-25
807-40
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
Test conditions
IC= -10μA, IE=0
IC= -10mA, IB=0
IE= -1μA, IC=0
VCB= -45V, IE=0
VCE= -40V, IB=0
VEB= -4 V,
IC=0
Min
-50
-45
-5
Max
Unit
V
V
V
-0.1
-0.2
-0.1
100
250
400
600
-0.7
-1.2
100
uA
uA
uA
hFE
VCE= -1V, IC= -100mA
160
250
VCE(sat)
VBE(sat)
fT
IC=-500mA, IB= -50mA
IC= -500mA, IB= -50mA
VCE= -5V, IC= -10mA
f=100MHz
V
V
MHz
collector capacitance
Cc
IE = 0; VCB = -10 V
f = 1 MHz
9
PF
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Transistors
BC807-16
BC807-25
BC807-40
Typical
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
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