JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
BC807-16W
BC807-25W
BC807-40W
TRANSISTOR (PNP)
SOT-323
FEATURES
Ldeally suited for automatic insertion
epitaxial planar die construction
complementary to BC817W
MARKING: 16W:5A; 25W:5B; 40W:5C
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-0.5
0.2
150
-55-150
Unit
V
V
V
A
W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
807-16W
807-25W
807-40W
Collector-emitter saturation voltage
Base-emitter
voltage
h
FE(2)
V
CE(sat)
V
BE(on)
f
T
C
ob
V
CE
= -1V,
I
C
= -500mA
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
Test conditions
I
C
= -10μA,
I
E
=0
Min
-50
-45
-5
-0.1
-0.2
-0.1
100
V
CE
= -1V,
I
C
= -100mA
160
250
40
-0.7
-1.2
80
10
V
V
MHz
pF
250
400
600
Max
Unit
V
V
V
μA
μA
μA
I
C
= -10mA, I
B
=0
I
E
= -1μA,
I
C
=0
V
CB
= -20 V , I
E
=0
V
CE
= -20 V , I
B
=0
V
EB
= -5 V ,
I
C
=0
I
C
=-500mA, I
B
= -50 mA
V
CE
= -1V,
V
CE
= -5 V,
f=100MHz
V
CB
=-10V,f=1MHz
I
C
= -500mA
I
C
= -10mA
Transition frequency
Collector output capacitance
A,May,2011
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