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BC847

100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
100 mA, 45 V, NPN, 硅, 小信号晶体管

器件类别:半导体    分立半导体   

厂商名称:南晶电子(DGNJDZ)

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器件参数
参数名称
属性值
端子数量
3
晶体管极性
NPN
最大集电极电流
0.1000 A
最大集电极发射极电压
45 V
加工封装描述
SOT-23, 3 PIN
状态
CONSULT MFR
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子涂层
锡 铅
端子位置
包装材料
塑料/环氧树脂
结构
单一的
元件数量
1
晶体管元件材料
最大环境功耗
0.2500 W
晶体管类型
通用小信号
最小直流放大倍数
110
额定交叉频率
100 MHz
文档预览
DONGGUAN NANJING ELECTRONICS LTD.,
TRANSISTOR (NPN)
1. BASE
2. EMITTER
3. COLLECTOR
Ideally suited for automatic insertion
For
switching
and AF
amplifier applications
Collector-Base Voltage
BC846
BC847
BC848
Collector-Emitter Voltage
80
50
30
V
V
BC846
BC847
BC848
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
65
45
30
6
0.1
200
150
-55~+150
V
A
mW
80
V
CBO
I
C
= 10μA, I
E
=0
50
30
65
V
CEO
V
EBO
I
CBO
I
C
= 10mA, I
B
=0
I
E
= 10μA, I
C
=0
V
CB
=70 V , I
E
=0
V
CB
=50 V , I
E
=0
V
CB
=30 V , I
E
=0
V
CE
=60 V , I
B
=0
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
CE
=45 V , I
B
=0
V
CE
=30 V , I
B
=0
V
EB
=5 V , I
C
=0
110
V
CE
= 5V, I
C
= 2mA
I
C
=100mA, I
B
= 5mA
I
C
=100mA, I
B
= 5mA
V
CE
= 5 V, I
C
= 10mA
200
420
0.1
220
450
800
0.5
1.1
100
4.5
V
45
30
6
0.1
V
V
A
0.1
A
A
V
V
MHz
pF
f
T
C
ob
f=
100MHz
V
CB
=10V,f=
1
MHz
Typical Characteristics
Static Characteristic
10
3000
BC847
h
FE
——
I
C
COMMON EMITTER
V
CE
= 5V
T
a
=100
(mA)
COMMON
EMITTER
T
a
=25
8
1000
18uA
6
I
C
COLLECTOR CURRENT
16uA
14uA
12uA
DC CURRENT GAIN
h
FE
20uA
T
a
=25
100
4
10uA
8uA
2
6uA
4uA
I
B
=2uA
0
0
1
2
3
4
5
6
7
10
1
10
100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
BEsat
——
=20
I
C
500
V
CEsat
=20
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
——
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
T
a
=25
T
a
=100
100
600
T
a
=25
T
a
=100
400
200
0.1
1
10
100
10
0.1
1
10
100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
100
I
C
COMMON EMITTER
V
CE
=5V
——
V
BE
500
f
T
——
I
C
(mA)
I
C
10
TRANSITION FREQUENCY
COLLECTOR CURRENT
T =1
00
a
f
T
100
1
T =2
5
a
(MHz)
COMMON EMITTER
V
CE
=5V
T
a
=25
10
0.25
0.1
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
12
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
250
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
200
(pF)
C
ib
10
CAPACITANCE
C
150
C
ob
1
100
50
0.1
0.1
0
1
10
30
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
)
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