Plastic-Encapsulate Transistors
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
BC846A/B
(NPN)
BC847A/B/C
(NPN)
BC848A/B/C
(NPN)
Marking
BC846A
1A
BC846B
1B
BC847A
1E
BC847B
1F
BC847C
1G
BC848A
1J
BC848B
1K
BC848C
1L
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
BC846
Collector-Base Voltage
BC847
BC848
BC846
Collector-Emitter Voltage
BC847
BC848
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CBO
V
CBO
V
CEO
V
CEO
V
CEO
V
EBO
I
C
Value
80
50
30
65
45
30
6
0.1
0.2
150
-55 to +150
Unit
V
V
V
A
W
P
C
T
J
Tstg
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P3-P1
Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC846
BC847
BC848
Collector-emitter breakdown voltage
BC846
BC847
BC848
Emitter-base breakdown voltage
Collector cut-off current
BC846
BC847
BC848
Collector cut-off current
BC846
BC847
BC848
Emitter cut-off current
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,BC848C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
VCBO
Test conditions
IC= 10µA, IE=0
Min
80
50
30
65
Typ
Max
Unit
V
VCEO
VEBO
IC= 10mA, IB=0
IE= 10µA, IC=0
VCB=70 V ,
IE=0
IE=0
IE=0
IB=0
IB=0
IB=0
IC=0
45
30
6
V
V
ICBO
VCB=50 V ,
VCB=30 V ,
VCE=60 V ,
VCE=45 V ,
VCE=30 V ,
VEB=5 V ,
0.1
μA
ICEO
IEBO
0.1
0.1
110
220
450
800
0.5
1.1
100
4.5
μA
μA
hFE
VCE(sat)
VBE(sat)
fT
Cob
VCE= 5V
,
IC= 2mA
200
420
IC=100mA, IB= 5mA
IC=100mA, IB= 5mA
VCE= 5 V IC= 10mA
,
f=100MHz
VCB=10V
,f=1MHz
V
V
MHz
pF
BC846A/B
BC847A/B/C
BC848A/B/C
Typical Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P3-P2
Plastic-Encapsulate Transistors
BC846A/B
BC847A/B/C
BC848A/B/C
Typical Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P3-P3
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