BC856 SERIES
DATA SHEET
PNP GENERAL PURPOSE TRANSISTORS
225 mW
POWER
VOLTAGE
65/45/30 Volts
FEATURES
General Purpose Amplifier Applications
NPN Epitaxial Silicon, Planar Design
Collector Current IC = -100mA
Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23
Terminals : Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.008 grams
Device Marking :
B C 856A =56A
B C 856B =56B
B C 857A =57A
B C 857B =57B
B C 857C =57C
B C 858A =58A
B C 858B =58B
B C 858C =58C
B C 859B =59B
B C 859C =59C
Top View
3
Collector
3
COLLECTOR
1
BASE
1
Base
2
Emitter
2
EMITTER
ABSOLUTE MAXIMUM RATINGS
PA RA M E TE R
C o lle c to r-E mi tte r Vo lta g e
C o lle c to r-B a s e Vo lta g e
E mi tte r-B a s e Vo lta g e
C o l l e c t o r C ur r e nt - C o nt i nuo us
Ma x P o we r D i s s i p a ti o n (No te 1 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
CEO
V
CBO
V
EBO
I
C
P
TOT
T
J
, T
S TG
BC856
-65
-80
BC857
-45
-50
-5
-100
225
BC858
BC859
-30
-30
U N IT S
V
V
V
mA
mW
- 5 0 TO + 1 5 0
O
C
REV.0.1-FEB.9.2009
PAGE . 1
BC856 SERIES
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance , Junction to Ambient
SYMBOL
R
ΘJA
Value
556
UNIT
O
C /W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout.
EL ECTRICAL CHARACTERISTICS (T
J
=25 C, unless otherwise noted)
PARAMETER
Collector - Emitter Breakdown Voltage
(I
C
=-10mA, I
B
=0)
BC856A,B
BC857A,B,C V
(BR)
CEO
BC858A,B,C, BC859B,C
Collector - Base Breakdown Voltage
(I
C
=-10µA, I
E
=0)
BC856A,B
BC857A,B,C V
(BR)
CBO
BC858A,B,C, BC859B,C
Emitter - Base Breakdown Voltage
(I
E
=-1µA, I
C
=0)
V
(BR)
EBO
I
EBO
SYMBOL
MIN.
-65
-45
-30
-80
-50
-30
-5.0
-
-
T
J
=150
O
C
DC Current Gain
(I
C
=-10µA, V
CE
=-5V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
h
FE
(I
C
=-2.0mA, V
CE
=-5V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
Collector – Emitter Saturation Voltage (I
C
=-10mA, I
B
=-0.5mA)
V
CE(SAT)
(I
C
=-100mA, I
B
=-5.0mA)
Base – Emitter Saturation Voltage
(I
C
=-10mA, I
B
=-0.5mA)
V
BE(SAT)
(I
C
=-100mA, I
B
=-5.0mA)
Base – Emitter On Voltage
(I
C
=-2.0mA, V
CE
=-5.0V)
V
BE(ON)
(I
C
=-10mA, V
CE
=-5.0V)
Collector - Base Capacitance
Current-Gain - Bandwidth Product
F
T
(I
C
=-10mA, V
CE
=-5.0V, f=100MHz)
REV.0.1-FEB.9.2009
PAGE . 2
TYP.
-
-
-
-
-
-
-
-
-
-
90
150
270
MAX.
-
-
-
-
-
-
-
-100
-15
-4.0
-
-
-
UNIT
V
V
V
nA
nA
uA
Emitter-Base Cutoff Current (V
EB
=-5V)
Collector-Base Cutoff Current (V
CB
=-30V, I
E
=0)
I
CBO
-
-
-
-
-
110
200
420
-
-
-
-
-0.60
-
180
290
520
-
-
-0.7
-0.9
-
-
-
220
450
800
-0.3
V
-0.65
-
V
-
-0.75
V
-0.82
4.5
pF
(V
CB
=-10V, I
E
=0, f=1MHz)
C
CB
-
-
200
-
MHz
BC856 SERIES
ELECTRICAL CHARACTERISTICS CURVES
600
T
J
=150 C
O
0.9
0.8
0.7
T
J
=25 C
O
500
400
hF E
V
BE(ON)
(V)
T
J
=100 C
O
0.6
0.5
0.4
0.3
T
J
=15 C
O
300
T
J
=25
O
C
T
J
=100
O
C
200
100
0
0.01
V
CE
=-5V
0.2
0.1
VCE = -5V
0.1
1
10
100
0
0.01
0.1
1
10
100
Collector Current,I
C
(mA)
Collector Current, I
C
(mA)
Fig.1- TYPICAL h
FE
vs. Collector Current
Fig.2- TYPICAL V
BE(ON)
vs. Collector Current
0.3
0.25
Capacitance,C(pF)
14
12
CIB (EB)
10
8
6
4
2
COB (BC)
V
CE(SAT)
(V)
0.2
0.15
T
J
=150 C
O
O
T
J
=100 C
0.1
0.05
0
0.01
T
J
=25 C
O
0.1
1
10
100
0
0.1
1
10
100
Collector Current,I
C
(mA)
Reverse Voltage,V
R
(V)
Fig.3- TYPICAL V
CE(SAT)
vs. Collector Current
Fig.4- TYPICAL CAPACITANCES vs. REVERSE VOLTAGE
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PAGE .
3
BC856 SERIES
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-FEB.9.2009
PAGE . 4