JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-323 Plastic-Encapsulate Transistors
BC856AW, BW
TRANSISTOR
BC857AW, BW,CW
BC858AW, BW,CW
(PNP)
SOT-323
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
V
CBO
BC856W
BC857W
BC858W
Collector-Emitter Voltage
V
CEO
BC856W
BC857W
BC858W
V
EBO
I
C
P
C*
T
J
T
stg
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-65
-45
-30
-5
-0.1
150
150
-65-150
V
A
mW
℃
℃
V
-80
-50
-30
V
Value
Unit
1. BASE
2. EMITTER
3. COLLECTOR
DEVICE MARKING
BC856AW=3A; BC856BW=3B;
BC857AW=3E; BC857BW=3F;BC857CW=3G;
BC858AW=3J; BC858BW=3K; BC858CW=3L
A,May,2011
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC856W
BC857W
BC858W
Collector-emitter breakdown voltage
BC856W
BC857W
BC858W
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
BC856AW, 857AW,858AW
BC856BW, 857BW,858BW
BC857CW,BC858CW
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
I
C
=-100mA, I
B
= -5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -10mA
f=100MHz
100
h
FE
V
CE
= -5V, I
C
= -2mA
V
EBO
I
CBO
I
E
= -1μA, I
C
=0
V
CB
= -30 V , I
E
=0
125
220
420
V
CEO
I
C
= -10mA, I
B
=0
V
CBO
I
C
= -10μA, I
E
=0
Symbol
Test conditions
Min
-80
-50
-30
-65
-45
-30
-5
-15
250
475
800
-0.65
-1.1
V
V
V
nA
V
V
Max
Unit
Transition frequency
MHz
Collector capacitance
C
ob
V
CB
=-10V, f=1MHz
4.5
pF
A,May,2011
Typical Characteristics
-6
BC856W
h
FE
—— I
C
V
CE
=-5V
T
a
=100
℃
Static Characteristic
-20uA
-18uA
-16uA
COMMON
EMITTER
T
a
=25
℃
500
(mA)
-5
I
C
COLLECTOR CURRENT
-4
-14uA
-12uA
DC CURRENT GAIN
h
FE
400
300
T
a
=25
℃
-3
-10uA
-8uA
200
-2
-6uA
-4uA
I
B
=-2uA
100
-1
-0
-0
-2
-4
-6
-8
-10
0
-1
-10
-100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1000
V
BEsat
——
I
C
β=20
-1000
V
CEsat
——
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-800
T
a
=25
℃
-600
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
-100
T
a
=100
℃
-400
T
a
=100
℃
T
a
=25
℃
-200
β=20
-0
-0.1
-1
-10
-100
-10
-0.1
-1
-10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
15
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0/I
C
=0
180
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
-10
(pF)
12
T
a
=25
℃
C
ib
150
C
120
CAPACITANCE
9
90
6
C
ob
60
3
30
0
-0.1
0
-1
0
25
50
75
100
125
150
REVERSE BIAS VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,May,2011
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