BC856…BC860
PNP Silicon Epitaxial Transistor
for switching and amplifier applications
TO-236 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
BC856
BC857, BC860
BC858, BC859
BC856
BC857, BC860
BC858, BC859
Symbol
-V
CBO
-V
CBO
-V
CBO
-V
CEO
-V
CEO
-V
CEO
-V
EBO
-I
C
-I
CM
P
tot
T
j
T
stg
Value
80
50
30
65
45
30
5
100
200
200
150
- 65 to + 150
Unit
V
V
V
V
V
V
V
mA
mA
mW
O
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
C
C
O
SEMTECH ELECTRONICS LTD.
®
Dated
：
16/03/2015 Rev
：
01
BC856…BC860
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 5 V, -I
C
= 2 mA
Current Gain Group A
B
C
Symbol
h
FE
h
FE
h
FE
-I
CBO
BC856
BC857, BC860
BC858, BC859
BC856
BC857, BC860
BC858, BC859
BC856
BC857, BC860
BC858, BC859
-V
(BR)CBO
-V
(BR)CBO
-V
(BR)CBO
-V
(BR)CES
-V
(BR)CES
-V
(BR)CES
-V
(BR)CEO
-V
(BR)CEO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
CE(sat)
-V
BE(on)
-V
BE(on)
f
T
C
ob
Min.
125
220
420
-
80
50
30
80
50
30
65
45
30
5
-
-
0.6
-
100
-
Max.
250
475
800
15
-
-
-
-
-
-
-
-
-
-
0.3
0.65
0.75
0.82
-
6
Unit
-
-
-
nA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MHz
pF
Collector Base Cutoff Current
at -V
CB
= 30 V
Collector Base Breakdown Voltage
at -I
C
= 10 µA
Collector Emitter Breakdown Voltage
at -I
C
= 10 µA
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
Emitter Base Breakdown Voltage
at -I
E
= 1 µA
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 0.5 mA
at -I
C
= 100 mA, -I
B
= 5 mA
Base Emitter On Voltage
at -V
CE
= 5 V, -I
C
= 2 mA
at -V
CE
= 5 V, -I
C
= 10 mA
Current Gain Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA, f = 100 MHz
Collector Output Capacitance
at -V
CB
= 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
®
Dated
：
16/03/2015 Rev
：
01
BC856…BC860
SEMTECH ELECTRONICS LTD.
®
Dated
：
16/03/2015 Rev
：
01
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