Ver 1.5
BCT642
Low-Power, Three-Port , High-Speed MIPI Switch
GENERAL DESCRIPTION
The BCT642 is a bi-directional, low-power,
high-speed analog switch. The pin out is designed
to ease differential signal layout and is configured
as a triple-pole, double-throw switch (TPDT). The
BCT642 is optimized for switching between two
MIPI devices, such as cameras or LCD displays
and on-board Multimedia Application Processors
(MAP).
The BCT642 is compatible with the requirements
of Mobile Industry Processor Interface (MIPI). The
low-capacitance design allows the BCT642 to
switch signals that exceed 500MHz in frequency.
Superior channel-to-channel crosstalk immunity
minimizes
interference
and
allows
the
transmission of high-speed differential signals and
single-ended signals, as described by the MIPI
specification. BCT642 is a direct replacement for
FSA642.
FEATURES
●
●
●
●
Low On Capacitance:7.0pF Typical
Low On Resistance:7.0Ω Typical
Wide -3db Bandwidth:1G Hz Typical
24-Lead QFN (2.5 x 3.4mm) Package
APPLICATIONS
Dual Camera Applications for Cell Phones
Dual LCD Applications for Cell Phones, Digital
Camera Displays, and Viewfinders
ORDERING INFORMATION
Order Number
BCT642EGG-TR
Package Type
QFN-24(2.5 mmx 3.4 mm)
Temperature
Range
-40° to +85°
C
C
Marking
642
QTY/Reel
3000
www.broadchip.com
1
Ver 1.5
TYPICAL OPERATING CIRCUIT
Camera1
D
C
Camera2
D D
C
LCD1
D
C
D D
LCD2
C
BCT642
BCT642
D
C
D
MAP Processor
Figure 1.
C
MAP Processor
Application Block Diagram
ABSOLUTE MAXIMUM RATINGS
Supply Voltage (V
CC
)…...........................-0.5V to +5.25V
DC Input Voltage (SEL, /OE) ........... .......-0.5V to V
CC
V
DC Switch I/O Voltage........................-0.5V to V
CC
+0.3V
DC Input Diode Current.........................................-50mA
DC Output Current ……….....................................50mA
Storage Temperature Range..................-65℃ to +150℃
Junction Temperature.............................................150℃
Operating Temperature Range.................-40℃ to +85℃
Lead Temperature (Soldering, 10 sec)....................260℃
ESD Susceptibility
All Pins.........................................................................4KV
(1)
CAUTION
This integrated circuit can be damaged by ESD if you don’t
pay attention to ESD protection. Broadchip recommends
that all integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and
installation procedures can cause damage. ESD damage
can range from subtle performance degradation to
complete device failure. Precision integrated circuits may
be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
Broadchip reserves the right to make any change in circuit
design, specification or other related things if necessary
without notice at any time. Please contact Broadchip sales
office to get the latest datasheet.
RECOMMENDED OPERATING CONDTIONS
The Recommended Operating Conditions table defines the conditions for actual device operation.
Recommended operating conditions are specified to ensure optimal performance to the datasheet
specifications.
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
2.65
4.3
V
(2)
V
CTRL
Control Input Voltage(SEL,/OE)
0
V
CC
V
V
SW
Switch I/O Voltage
-0.5
V
CC
V
℃
T
A
Operating Temperature
-40
+85
Notes：
1. The input and output negative ratings maybe exceed if the input and output diode current ratings are observed.
2. The control input must be held HIGH or LOW; it must not float.
www.broadchip.com
2
Ver 1.5
PIN CONFIGURATION
CLKAN
CLKAP
DA1N
14
DB2N
DA1P
18
17
16
15
13
12
DB2P
DB1P
DB1N
CLKBP
CLKBN
NC
DA2P
19
DA2N
SEL
VCC
GND
/OE
NC
20
11
21
10
22
9
23
8
24
1
2
3
4
5
6
7
CLKN
CLKP
Figure2. Pin Configuration(Top Through View)
PIN DESCRIPTION
PIN
NAME
FUNCTION
1, 2
3, 4
5, 6
7, 24
8
9
10
11
12, 13
14, 15
16, 17
18, 19
20, 21
22, 23
CLKP, CLKN
D1P, D1N
D2P, D2N
NC
/OE
GND
VCC
SEL
DA2N, DA2P
DA1N, DA1P
CLKAN, CLKAP
DB2N, DB2P
DB1P, DB1N
CLKBP, CLKBN
Clock Path (Common)
Data Path 1 (Common)
Data Path2 (Common)
No Connect (Float)
Output Enable (Active Low)
Ground
Power
Select (0=A,1=B)
Data Path (A2)
Data Path (A1)
Clock Path (A)
Data Path (2B)
Data Path (1B)
Clock Path (B)
www.broadchip.com
D1N
D2N
D1P
D2P
3
Ver 1.5
FUNCTIONAL DIAGRAM
BCT642
CLKAP(17)
CLKAN(16)
(1)CLKP
DA1P(15)
DA1N(14)
(2)CLKN
DA2P(13)
DA2N(12)
(3)D1P
(4)D1N
(5)D2P
(6)D2N
CLKBP(22)
CLKBN(23)
DB1P(20)
DB1N(21)
DB2P(19)
DB2N(18)
(8)/OE
(11)SEL
SWITCH
CONTROL
(10)VCC
(9)GND
Figure3. Functional Diagram
TRUTH TABLE
SEL
Don’t care
LOW
HIGH
/OE
HIGH
LOW
LOW
Function
Disconnect
D1, D2, CLK=DA1, DA2, CLKA
D1, D2, CLK=DB1, DB2, CLKB
www.broadchip.com
4
Ver 1.5
DC ELECTRICAL CHARACTERISTICS
( All typical values are T
A
= 25℃, unless otherwise specified.)
PARAMETER
Clamp Diode Voltage
Control Input Leakage
Input Voltage High
Input Voltage Low
Off-State Leakage
Quiescent Supply Current
Increase in I
CC
Current Per
Control Voltage and V
CC
SYM
V
IK
I
IN
V
IH
V
IL
I
OZ
I
CC
I
CCT
CONDITIONS
I
IN
=-18mA
V
SW
=0 to 4.3V
V
IN
=0 to V
CC
V
IN
=0 to V
CC
A,B=+0.3V to V
CC
-0.3
V
CNTRL
=0 or V
CC
, I
OUT
=0
V
CNTRL
=1.8V
V
CC
(V)
2.775
4.3
2.65 to 2.775
4.3
2.65 to 2.775
4.3
4.3
2.775
-2
-1
1.3
1.7
0.5
2
1
1.5
MIN
TYP
MAX UNITS
-1.2
1
V
uA
V
V
uA
uA
uA
DC ELECTRICAL CHARACTERISTICS, LOW-SPEED MODE
( All typical values are T
A
= 25℃, unless otherwise specified.)
PARAMETER
LS Switch On Resistance
(3)
LS Delta R
ON(4)
SYM
R
ON
ΔR
ON
CONDITIONS
V
SW
=1.2V,I
ON
=-10mA
V
SW
=1.2V,
I
ON
=-10mA (Intra-pair)
V
CC
(V)
2.65
2.65
MIN
TYP
10
0.65
MAX UNITS
14
Ω
Ω
Notes:
3. Measured by the voltage drop between A/B and CLK/Dn pins at the indicated current through the switch.
4. Guaranteed by characterization
DC ELECTRICAL CHARACTERISTICS, HIGH-SPEED MODE
( All typical values are T
A
= 25℃, unless otherwise specified.)
PARAMETER
HS Switch On Resistance
(5)
HS Delta R
ON(6)
SYM
R
ON
ΔR
ON
CONDITIONS
V
SW
=0.4V,I
ON
=-10mA
V
SW
=0.4V,
I
ON
=-10mA (Intra-pair)
V
CC
(V)
2.65
2.65
MIN
TYP
7
0.65
MAX UNITS
9.5
Ω
Ω
Notes:
5. Measured by the voltage drop between A, B, and Dn pins at the indicated current through the switch.
6. Guaranteed by characterization
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5
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