BCV47
NPN Darlington Transistors
for preamplifier input applications
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
30
30
10
300
Unit
V
V
V
mA
Typical Thermal Resistance
Total Power Dissipation
Junction Temperature
Storage Temperature Range
1
1）
R
θJA
P
tot
T
j
T
S
556
225
150
- 55 to + 150
°C/W
mW
O
C
C
O
Thermal resistance from junction to ambient at P .C.B. mounted
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
h
FE
at V
CE
= 5 V, I
C
= 10 mA
at V
CE
= 5 V, I
C
= 100 mA
Collector Cutoff Current
at V
CB
= 30 V
Collector Emitter Breakdown Voltage
at I
C
= 10 mA
Collector Emitter Saturation Voltage
at I
C
= 100 mA, I
B
= 0.1 mA
Base Emitter On-state Voltage
at I
C
= 100 mA, V
CE
= 5 V
Transition Frequency
at V
CE
= 5 V, I
C
= 50 mA, f = 100 MHz
I
CBO
-
-
100
nA
h
FE
20000
-
-
-
10000
-
-
-
Symbol
Min.
Typ.
Max.
Unit
V
(BR)CEO
V
CE(sat)
V
BE(on)
f
T
30
-
-
125
-
-
-
-
-
1.5
2.0
-
V
V
V
MHz
REV.08
1 of 2
BCV47
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
REV.08
2 of 2
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