JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
BCW66F/66G/66H
FEATURES
Complementary to BCW68
TRANSISTOR (NPN)
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
75
45
5
0.8
0.2
150
-55
~
+150
Unit
V
V
V
A
W
℃
℃
Marking: BCW66F:EF;
BCW66G:EG;
BCW66H:EH
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
V
CE
=1V, I
C
= 10mA
h
FE2
DC current gain
*
Test conditions
I
C
= 10
μ
A, I
E
=0
I
C
= 10mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=45 V, I
E
=0
V
EB
=4 V, I
C
=0
V
CE
=10V, I
C
=0. 1mA
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
Min
75
45
5
Typ
Max
Unit
V
V
V
0.02
0.02
35
50
80
75
110
180
100
160
250
35
60
100
μ
A
μ
A
V
CE
=1V, I
C
=100mA
h
FE3
V
CE
=2V, I
C
=500mA
h
FE4
250
400
630
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Noise figure
*
V
CE(sat)
V
BE(sat)
I
C
=100mA, I
B
=10mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V,I
C
=20mA,
f=100
MHz
V
CB
=10V,I
E
=0,
f=
1MHz
V
EB
=0.5V,I
E
=0,
f=
1MHz
V
CE
=5V,I
C
=0.2mA,
f=1K
Hz,
Rs=1KΩ,BW=200Hz
100
0.3
0.7
2
V
V
V
MHz
f
T
C
ob
C
ib
NF
12
80
10
pF
pF
dB
pulse test.
B,Apr,2012
Typical Characteristics
300
BCW66H
h
FE
—— I
C
V
CE
= 1V
T
a
=100 C
o
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
560uA
480uA
400uA
h
FE
DC CURRENT GAIN
500
(mA)
250
800uA
720uA 640uA
400
200
I
C
COLLECTOR CURRENT
300
T
a
=25 C
o
150
320uA
240uA
160uA
200
100
50
100
I
B
=80uA
0
0
1
2
3
4
5
6
7
8
0
0.1
1
10
100
800
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=10
400
V
CEsat
——
β=10
I
C
1.0
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
300
0.8
T
a
=25
℃
0.6
200
0.4
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
0.2
0.0
0.1
1
10
100
800
0
0.1
1
10
100
800
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
200
180
160
140
120
100
80
60
40
20
0
1
f
T
——
I
C
100
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
(MHz)
f
T
TRANSITION FREQUENCY
CAPACITANCE
C
(pF)
T
a
=25 C
o
C
ib
10
C
ob
V
CE
=10V
T
a
=25 C
10
100
1
0.1
1
10
20
o
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
V
(V)
0.3
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(W)
0.2
0.1
0.0
0
25
50
75
100
125
150
B,Apr,2012
AMBIENT TEMPERATURE
T
a
(
℃
)
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