JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCX19
FEATURES
Low voltage
MARKING : U1
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
50
45
5
500
225
-55-150
Units
V
V
V
mA
mW
℃
SOT-23
TRANSISTOR (NPN)
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
Collector-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE(on)
Test
conditions
Min
50
45
5
0.1
10
100
70
40
0.62
1.2
V
V
600
Typ
Max
Unit
V
V
V
μ
A
μ
A
I
C
=100μA, I
E
=0
= 0
I
C
=10mA, I
B
I
E
=100
μ
A, I
C
=0
= 0
V
CB
=20V , I
E
= 0
V
EB
=5V , I
C
V
CE
= 1V, = 100mA
I
C
V
CE
= 300mA
= 1V, I
C
V
CE
= 500mA
= 1V, I
C
Ic=500mA,
I
B
= 50mA
Ic=500mA, V
CE
= 1V
A,Jun,2011
Typical Characteristics
150
BCX19
1000
I
C
——
V
CE
500uA
COMMON
EMITTER
T
a
=25
℃
h
FE
h
FE
——
I
C
COMMON EMITTER
V
CE
=1V
(mA)
125
450uA
400uA
T
a
=100
℃
T
a
=25
℃
100
I
C
100
COLLECTOR CURRENT
300uA
75
250uA
50
200uA
150uA
25
100uA
I
B
= 50uA
0
0
1
2
3
4
5
6
DC CURRENT GAIN
350uA
10
10
100
500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
500
V
CEsat
——
I
C
V
BEsat
——
2000
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
1000
T
a
=25
℃
100
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β=10
10
100
1
10
100
500
1
10
100
β=10
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
500
I
C
——
V
BE
500
f
T
——
I
C
(mA)
100
I
C
TRANSITION FREQUENCY
f
T
T =1
00
℃
a
10
1
(MHz)
T =2
5
℃
a
100
COLLECTOR CURRENT
COMMON EMITTER
V
CE
=1V
0.1
0
300
600
900
1200
COMMON EMITTER
V
CE
=1V
T
a
=25
℃
10
1
10
100
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
250
P
C
——
T
a
(pF)
C
ib
COLLECTOR POWER DISSIPATION
P
C
(mW)
T
a
=25
℃
200
C
T
150
CAPACITANCE
10
100
C
ob
50
1
0.1
0
1
10
20
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Jun,2011
电子工程世界
DSP 与 ARM 处理器
