JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
BCX38
TRANSISTOR (NPN)
1.EMITTER
FEATURES
High DC Current Gain
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
60
10
0.8
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
*
Test
conditions
Min
80
60
10
Typ
Max
Unit
V
V
V
I
C
= 0.01mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=0.01mA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=8V,I
C
=0
V
CE
=5V, I
C
=100mA
BCX38A
BCX38B
BCX38C
V
CE
=5V, I
C
=500mA
BCX38A
BCX38B
BCX38C
V
(BR)EBO
0.1
0.1
500
2000
5000
1000
4000
10000
1.25
1.8
μA
μA
h
FE(1)
*
DC current gain
h
FE(2)
*
Collector-emitter saturation voltage
Base-emitter voltage
*Pulse test
V
CE(sat)
V
BE
*
*
I
C
=800mA,I
B
=8mA
I
C
=800mA, V
CE
=5V
V
V
A,Dec,2010
电子工程世界
