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BD1045CS

10 A, 45 V, SILICON, RECTIFIER DIODE, TO-252

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
TO-252
包装说明
ROHS COMPLIANT, PLASTIC PACKAGE-3
针数
4
Reach Compliance Code
_compli
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW POWER LOSS
应用
EFFICIENCY
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-252
JESD-30 代码
R-PSSO-G2
最大非重复峰值正向电流
100 A
元件数量
2
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
45 V
表面贴装
YES
技术
SCHOTTKY
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BD1040CS~BD10200CS
SCHOTTKY BARRIER RECTIFIERS
CURRENT
VOLTAGE
40 to 200 Volts
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For through hole applications
• Low profile package
• Built-in strain relief
• Low power loss, High efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
• In compliance with EU RoHS 2002/95/EC directives
10.0 Amperes
MECHANICALDATA
• Case: TO-252 molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
• Polarity: As marking
• Weight: 0.0104 ounces, 0.297 grams.
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d ( S e e F i g ur e 1 )
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 5 . 0 A p e r l e g
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng Vo l t a g T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J C
T
J
, T
S T G
BD1040CS BD1045CS BD1050CS BD1060CS BD1080CS BD1090CS BD10100CS BD10150CS BD10200CS
U N IT S
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
10
100
90
63
90
100
70
100
150
105
150
200
140
200
0 .7 0
0 .7 5
0 .0 5
20
3 .0
0 .8 0
0 .9 0
V
mA
O
C /
W
C
-5 5 to +1 5 0
-65 to +175
O
NOTES:
Both Bonding and Chip structure are available.
STAD-APR.30.2009
PAGE . 1
BD1040CS~BD10200CS
RATING
AND CHARACTERISTIC CURVES
AVERAGE FORWARD RECTIFIED
CURRENT AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
20.0
16.0
12.0
8.0
4.0
0
0
20
40
60
80
100
120
O
= 40V
= 45-200V
120
100
80
60
40
20
RESISTIVE OR
INDUCTIVE LOAD
140
160
180
0
1
10
NO. OF CYCLE AT 60Hz
100
CASE TEMPERATURE, C
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE
FORWARD SURGE CURRENT
10
INSTANTANEOUS REVERSE CURRENT, mA
10
40-45V
1.0
T
J
=100 C
O
FORWARD CURRENT, AMPERES
50-60V
80-100V
1.0
150-200V
T
J
=
75
O
C
0.1
T
J
=
25
O
C
.01
T
A
=25
O
C
.001
0
20
40
60
80
100 120
140
0.1
0.4
0.6
0.8
1.0
1.2
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
FORWARD VOLTAGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
STAD-APR.30.2009
PAGE . 2
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 3K per 13" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-DEC.22.2008
PAGE . 3
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