JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD233/235/237
TRANSISTOR (NPN)
TO-126
FEATURES
Complement to BD 234/236/238 respectively
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Collector-Base Voltage
BD233
BD235
BD237
BD233
BD235
BD237
Value
45
60
100
45
60
80
5
2
1.25
150
-65-150
Unit
V
1. EMITTER
2. COLLECTOR
3. BASE
V
CEO
Collector-Emitter Voltage
V
V
EBO
I
C
P
C*
T
J
T
stg
Emitter-Base Voltage
Collector Current –Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BD233
BD235
BD237
Collector-emitter breakdown voltage
BD233
BD235
BD237
Emitter-base breakdown voltage
Collector cut-off current
BD233
BD235
BD237
Emitter cut-off current
I
EBO
H
FE(1)
DC current gain
H
FE(2)
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
V
CE
=2V, I
C
= 1A
I
C
=1A, I
B
= 100m A
V
CE
=10V, Ic=250mA
f =10MHz
3
25
0.6
V
MHz
I
CBO
V(BR)
EBO
I
E
= 1mA, I
C
=0
V
CB
= 45V, I
E
=0
V
CB
= 60V, I
E
=0
V
CB
= 100V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 2V, I
C
=150mA
40
1
mA
100
µA
V(BR)
CEO
I
C
= 100mA, I
B
=0
V(BR)
CBO
I
C
= 1mA, I
E
=0
Symbol
Test
conditions
Min
45
60
100
45
60
80
5
V
V
V
Max
Unit
A,Jun,2011
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