JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD439/441
TRANSISTOR (NPN)
TO-126
FEATURES
Amplifier and
Switching Applications
MAXIMUM RATINGS(T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
BD439
BD441
V
CEO
BD439
BD441
V
EBO
I
C
P
C
T
J
T
stg
Value
60
80
60
80
5
4
1.25
150
-55-150
Units
V
V
V
A
W
℃
℃
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V
(BR)CBO
Test
conditions
BD439
BD441
I
C
=100mA,I
B
=0
BD439
BD441
I
E
=100μA,I
C
=0
V
CB
=60V,I
E
=0
V
CB
=80V,I
E
=0
V
EB
=5V,I
E
=0
V
CE
=1V,I
C
=500mA
V
CE
=5V,I
C
=10mA
V
CE
=1V,I
C
=2A
BD439
BD441
BD439
BD441
I
C
=3A,I
B
=0.3A
V
CE
=1V,I
C
=2A
V
CE
=1V,I
C
=250mA
3
40
20
Min
60
80
60
80
5
Typ
Max
Unit
V
I
C
=100μA,I
E
=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
CEO(SUS)
(1)
V
V
100
V
(BR)EBO
I
CBO
BD439
BD441
μA
Emitter cut-off current
I
EBO
h
FE(1) (1)
h
FE(2)
(1)
1
475
mA
DC current gain
15
25
15
0.8
1.1
h
FE(3) (1)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
(1)
V
CE(sat)
V
BE
f
T
(1)
V
V
MHz
(1)
Pulse test
A,Jun,2011
电子工程世界
