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BF422

NPN晶体管

器件类别:分立半导体   

厂商名称:长电科技(JCET)

厂商官网:http://www.cj-elec.com/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BF420
BF422
TRANSISTOR (NPN)
TO-92
1. EMITTER
FEATURES
Low feedback capacitance.
NPN transistors in a TO-92 plastic package.
PNP complements: BF421 and BF423
Class-B video output stages in colour
television and professional monitor equipment.
2.COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Rth j-a
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
thermal resistance from junction to ambient
junction temperature
Storage Temperature Range
BF420
300
300
5
100
0.625
200
150
-65to150
BF422
250
250
Unit
V
V
V
mA
W
℃/W
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BF420
BF422
Collector-emitter breakdown voltage
BF420
BF422
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Feedback capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Test
conditions
MIN
300
250
300
250
5
0.01
0.05
50
0.6
60
1.6
V
MHz
pF
MAX
UNIT
V
V
V
μA
μA
I
C
=100μA, I
E
=0
I
C
= 1mA , I
B
=0
I
E
=100μA, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=20V, I
C
=25mA
I
C
=30mA, I
B
= 5mA
V
CE
=10V, I
C
= 10mA
f
T
C
re
f=
100MHz
V
CE
=30V,I
C
=0,f=1MHz
A,May,2011
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