BP104, BP104S
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: top view
• Dimensions (in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm
2
): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 65°
948386_1
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
BP104 is a PIN photodiode with high speed and high radiant
sensitivity in miniature, flat, top view plastic package with
daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
BP104S is packed in tubes, specifications like BP104.
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
PRODUCT SUMMARY
COMPONENT
BP104
BP104S
Note
• Test condition see table “Basic Characteristics”
I
ra
(μA)
45
45
ϕ
(deg)
± 65
± 65
λ
0.5
(nm)
870 to 1050
870 to 1050
ORDERING INFORMATION
ORDERING CODE
BP104
BP104S
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Tube
REMARKS
MOQ: 3000 pcs, 3000 pcs/bulk
MOQ: 1800 pcs, 45 pcs/tube
PACKAGE FORM
Top view
Top view
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
≤
3s
Connected with Cu wire, 0.14
mm
2
T
amb
≤
25 °C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.6, 24-Aug-11
Document Number: 81500
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BP104, BP104S
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit Voltage
Short circuit current
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
TEST CONDITION
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 5 V
SYMBOL
V
(BR)
I
ro
C
D
C
D
V
o
I
k
I
ra
40
MIN.
60
2
70
25
350
38
45
± 65
950
870 to 1050
4x
10
-14
100
100
40
30
TYP.
MAX.
UNIT
V
nA
pF
pF
mV
μA
μA
deg
nm
nm
W/√ Hz
ns
ns
ϕ
λ
p
λ
0.5
NEP
t
r
t
f
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
I
ro
- Reverse Dark Current (nA)
1000
I
ra
- Reverse Light Current (µA)
100
100
10
10
1
λ
= 950 nm
V
R
= 5
V
V
R
= 10
V
1
20
40
60
80
100
0.1
0.01
94 8414
0.1
1
10
94 8403
T
amb
- Ambient Temperature (°C)
E
e
- Irradiance (mW/cm²)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
I
ra rel
- Relative Reverse Light Current
1.4
I
ra
- Reverse Light Current (µA)
100
1 mW/cm
2
0.5 mW/cm
2
1.2
V
R
= 5
V
λ
= 950 nm
1.0
λ
= 950 nm
10
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
0.8
0.6
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
1
0.1
94 8415
1
10
100
94 8409
V
R
- Reverse
Voltage
(V)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Rev. 1.6, 24-Aug-11
Document Number: 81500
2
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BP104, BP104S
www.vishay.com
Vishay Semiconductors
80
C
D
- Diode Capacitance (pF)
60
E=0
f = 1 MHz
40
20
0
0.1
948407
1
10
100
V
R
- Reverse
Voltage
(V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
S (λ)
rel
- Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0
750
850
950
1050
1150
94 8408
λ
-
Wavelength
(nm)
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
S
rel
- Relative Radiant Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
94 8406
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 1.6, 24-Aug-11
Document Number: 81500
3
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
BP104, BP104S
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
Vishay Semiconductors
96 12186
TUBE PACKAGING DIMENSIONS
in millimeters
10.7
Quantity per tube: 45 pcs
Quantity per
box:
1800 pcs
9.5
214.5
Stopper
18800
Fig. 8 - Drawing Proportions not scaled
Rev. 1.6, 24-Aug-11
Document Number: 81500
4
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000