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BR805

Bridge Rectifier Diode, 8A, 50V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:苏州固锝(Good-Ark)

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
S-PUFM-W4
Reach Compliance Code
compliant
最小击穿电压
50 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JESD-30 代码
S-PUFM-W4
最大非重复峰值正向电流
125 A
元件数量
4
相数
1
端子数量
4
最高工作温度
125 °C
最低工作温度
-55 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
SQUARE
封装形式
FLANGE MOUNT
最大重复峰值反向电压
50 V
表面贴装
NO
端子形式
WIRE
端子位置
UPPER
Base Number Matches
1
文档预览
BR805 THRU BR810
SINGLE-PHASE SILICON BRIDGE
Reverse Voltage -
50 to 1000 Volts
Forward Current -
8.0 Amperes
Features
Surge overload rating - 125 amperes peak
Low forward voltage drop
Mounting position: Any
Small size; simple installation
Silver plated copper leads
Ceramic case on BR8 series
DIM ENSIONS
DIM
A
B
C
E
F
G
inches
Min.
0.730
0.250
0.480
0.750
0.380
0.140
Max.
0.770
0.300
0.520
-
0.042
0.150
Min.
18.542
6.35
12.19
19.1
0.97
3.56
mm
Max.
19.558
7.63
13.21
-
1.07
3.81
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
For capacitive load, derate current by 20%.
Symbols
BR805
BR81
BR82
BR84
BR86
BR88
BR810
Units
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum average forward
rectified output current at
T
C
=100
T
A
=50
*
**
V
RRM
V
RMS
I
(AV)
I
FSM
V
F
T
A
=25
T
A
=100
I
R
T
J
T
STG
50
35
100
70
200
140
400
280
8.0
8.0
125.0
1.1
10.0
1.0
-55 to +125
-55 to +150
600
420
800
560
1000
700
Volts
Volts
Amps
Amps
Volts
uA
mA
Peak forward surge current, 8.3mS single
half sine-wave superimposed on rated load
Maximum forward Voltage drop per bridge
element at 4.0A peak
Maximum DC reverse current at rated
DC blocking voltage per element
Operating temperature range
Storage temperature range
Notes:
* Unit mounted on metal chassis
** Unit mounted on P.C. board
1
RATINGS AND CHARACTERISTIC CURVES
2
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