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BRCS20P04DP

漏源电压(Vdss):40V 连续漏极电流(Id)(25°C 时):20A(Tc) 栅源极阈值电压:2.5V @ 250uA 漏源导通电阻:35mΩ @ 18A,10V 最大功率耗散(Ta=25°C):50W(Tc) 类型:P沟道

器件类别:分立半导体    MOS(场效应管)   

厂商名称:蓝箭(BLUE ROCKET)

厂商官网:http://www.fsbrec.com/

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器件参数
参数名称
属性值
漏源电压(Vdss)
40V
连续漏极电流(Id)(25°C 时)
20A(Tc)
栅源极阈值电压
2.5V @ 250uA
漏源导通电阻
35mΩ @ 18A,10V
最大功率耗散(Ta=25°C)
50W(Tc)
类型
P沟道
文档预览
BRCS20P04DP
Rev.B Jul.-2018
DATA SHEET
描述
/
Descriptions
TO-252
塑封封装
P
沟道
MOS
场效应管。P-CHANNEL
MOSFET in a TO-252 Plastic Package.
特征
/ Features
½栅电荷,½反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途
/
Applications
用于½压电路如:½½电路、
DC/DC
½换、便携式产品的电源高效½换。
Suited for low voltage applications such as automotive,DC/DC Converters,and high
efficiency
switching for power management in protable and battery operated products.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
4
1
3
2
PIN1:G
放大及印章代码
PIN 2:D
PIN 3:S
PIN 4:D
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions.
http://www.fsbrec.com
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BRCS20P04DP
Rev.B Jul.-2018
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
DSS
V
GSS
I
D
(Tc=25℃)
I
DM
E
AS
I
AR
P
D
(Tc=25℃)
T
J
,T
STG
数值
Rating
-40
±20
-20
-80
36
-20
50
-55 to 150
单½
Unit
V
V
A
A
mJ
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current - Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Power Dissipation
Operating and Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
SD
I
S
I
SM
C
iss
C
oss
C
rss
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
I
D
=20A
V
DD
=-30V
V
GS
=-10V
R
G
=25Ω
V
GS
=-10V
V
DD
=-30V
I
D
=-20A
V
DS
=-25V
f=1.0MHz
V
GS
=0V
1450
104
80
17
5.5
3
6
16
26
10
测试条件
Test Conditions
V
GS
=0V
V
DS
=-40V
V
GS
=±20V
V
GS
=-10V
V
GS
=-4.5V
V
GS
=0V
I
D
=-250μA
V
GS
=0V
V
DS
=0V
-1.0
32
I
D
=-18A
I
D
=-9A
I
S
=-20A
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-40
1.0
±100
-2.5
35
60
-1.2
-20
-80
V
μA
nA
V
mΩ
mΩ
V
A
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
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Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Drain-Source Diode Forward Voltage
Maximum Body-Diode Continuous
Current
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
http://www.fsbrec.com
V
DS
=V
GS
I
D
=-250μA
BRCS20P04DP
Rev.B Jul.-2018
DATA SHEET
电参数曲线图
/ Electrical Characteristic Curve
http://www.fsbrec.com
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BRCS20P04DP
Rev.B Jul.-2018
DATA SHEET
电参数曲线图
/ Electrical Characteristic Curve
http://www.fsbrec.com
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BRCS20P04DP
Rev.B Jul.-2018
DATA SHEET
外½尺寸图
/ Package Dimensions
http://www.fsbrec.com
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