BRCS4606SC
Rev.E Oct.-2018
描述
/
Descriptions
DATA SHEET
SOP-8
塑封封装互补增强模式
MOS
场效应管。
Complementary Enhancement MOSFET in a SOP-8 Plastic Package.
特征
/ Features
P-channel
V
DS
(V)=-30V
I
D
=-6A
R
DS(ON)
<65mΩ(V
GS
=-10V)
R
DS(ON)
<75mΩ(V
GS
=-4.5V)
N-channel
V
DS
(V)=30V
I
D
=6.9A
R
DS(ON)
<32mΩ(V
GS
=10V)
R
DS(ON)
<36mΩ(V
GS
=4.5V)
用途
/
Applications
用于高功率 DC/DC ½换和功率开关。适用于½负½½开关或脉½调制应用。
These devices are well suited for high efficiency switching DC/DC converters and switch mode power
supplies. And suitable for use as a load switch or in PWM applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
8
7
6
5
1
2
3
4
放大及印章代码
/ h
FE
Classifications & Marking
见印章说明
。
See Marking Instructions.
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BRCS4606SC
Rev.E Oct.-2018
极限参数
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
数值
Rating
N-channel
P-channel
±30
±20
6.9
5.8
±30
2
1.44
62.5
110
60
-55 to +150
4
-6.0
-5.0
符号
Symbol
V
DSS
V
GSS
A
单½
Unit
V
V
A
A
A
W
W
℃/W
℃/W
℃/W
℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
B
Power Dissipation
Maximum Junction-to-Ambient
A
I
D
(T
A
=25℃)
I
D
(T
A
=70℃)
I
DM
P
D
(T
A
=25
℃
)
P
D
(T
A
=70
℃
)
R
θJA
(t≤10s)
R
θJA
R
θJL
T
J
,T
STG
Maximum Junction-to-Lead
C
Junction and Storage Temperature
Range
Notes:
A:The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a
still air environment with T
A
=25°C. The value in any a given application depends on the user's
specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C.The R
θJA
is the sum of the thermal impedance from junction to lead R
θJL
and lead to ambient.
D.The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μs
pulses, duty cycle 0.5%
max.
E.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still
air environment with T
A
=25°C. The SOA curve provides a single pulse rating.
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BRCS4606SC
Rev.E Oct.-2018
N-
沟道电性½参数/N-CHANNEL
Electrical Characteristics(Ta=25
℃
)
参数
Parameter
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source
On-Resistance
Forward Transconductance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge(10V)
Total Gate Charge(4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
F
=6.9A
dI/dt=100A/μs
I
F
=6.9A
dI/dt=100A/μs
V
DS
=15 V
R
L
=2.1Ω
V
GS
=10V
R
GEN
=3Ω
符号
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(on)
测试条件
Test Conditions
V
GS
=0V
V
DS
=24V
V
DS
=24V
T
J
=55℃
V
GS
=±20V
V
DS
=V
GS
V
DS
=4.5V
V
GS
=10V
R
DS(on)
V
GS
=10V
T
J
=125℃
V
GS
=4.5V
g
FS
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
V
GS
=10V
I
D
=6.9A
V
DS
=15V
V
DS
=0V
f=1.0MHz
V
GS
=0V
V
DS
=15V
f=1.0MHz
V
GS
=0V
V
DS
=5.0V
V
GS
=0V
I
D
=250μA
V
GS
=0V
V
GS
=0V
V
DS
=0V
I
D
=250μA
V
GS
=5.0V
I
D
=6.9A
I
D
=6.9A
I
D
=5.0A
I
D
=5.0A
I
S
=1.0A
0.7
6.9
24
32.3
27
9
0.76
680
102
77
3.0
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
16.5
7.8
1.0
32
38
36
最小值
Min
30
1.0
5.0
100
1.3
典型值
Typ
最大值
Max
单½
Unit
V
μA
μA
nA
V
A
mΩ
mΩ
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
DATA SHEET
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BRCS4606SC
Rev.E Oct.-2018
N-
沟道电参数曲线图
/ N-CHANNEL Electrical Characteristic Curve
DATA SHEET
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BRCS4606SC
Rev.E Oct.-2018
N-
沟道电参数曲线图
/ N-CHANNEL Electrical Characteristic Curve
DATA SHEET
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