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BRD100N03

漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):100A(Tc) 栅源极阈值电压:3V @ 250uA 漏源导通电阻:5.5mΩ @ 50A,10V 最大功率耗散(Ta=25°C):100W(Tc) 类型:N沟道

器件类别:分立半导体    MOS(场效应管)   

厂商名称:蓝箭(BLUE ROCKET)

厂商官网:http://www.fsbrec.com/

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器件参数
参数名称
属性值
漏源电压(Vdss)
30V
连续漏极电流(Id)(25°C 时)
100A(Tc)
栅源极阈值电压
3V @ 250uA
漏源导通电阻
5.5mΩ @ 50A,10V
最大功率耗散(Ta=25°C)
100W(Tc)
类型
N沟道
文档预览
BRD100N03
Rev.A .Jun. -2017
DATA SHEET
描述
/
Descriptions
TO-252
塑封封装
N
沟道
MOS
场效应管。N-CHANNEL
MOSFET in a TO-252 Plastic Package.
特征
/ Features
½栅电荷,½反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途
/
Applications
用于高功率 DC/DC ½换和功率开关。
These devices are well suited for high efficiency switching DC/DC converters and switch mode power
supplies.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
4
1
2
3
PIN1:G
放大及印章代码
PIN 2:D
PIN 3:S
PIN 4:D
/ h
FE
Classifications & Marking
见印章说明。
See Marking Instructions.
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BRD100N03
Rev.A .Jun. -2017
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
DSS
I
D
(Tc=25℃)
I
DM
V
GSS
E
AS
P
D
(Tc=25℃)
T
J
,T
STG
数值
Rating
30
100
400
±20
875
100
-55 to 150
单½
Unit
V
A
A
V
mJ
W
Drain-Source Voltage
Drain Current
Peak Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Total Power Dissipation
Junction and Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
V
SD
R
DS(on)
C
iss
C
oss
C
rss
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15V
R
GEN
=6Ω
I
D
=1A
V
GS
=10V
V
DS
=15V
I
D
=16A
V
GS
=5V
V
GS
=0V
V
DS
=15V
f=1.0MHz
测试条件
Test Conditions
V
GS
=0V
I
D
=250μA
V
DS
=30V
V
GS
=±20V
V
DS
=V
GS
I
S
=20A
V
GS
=10V
V
GS
=4.5V
V
GS
=0V
V
DS
=0V
I
D
=250μA
V
GS
=0V
I
D
=50A
I
D
=40A
3.5
5.0
9500
800
300
50
20.8
19
25.7
10
128
34
50
20
200
70
65
1.0
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
30
V
1
±0.1
3.0
1.5
5.5
7.0
μA
μA
V
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
参数
Parameter
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Forward On Voltage
Static Drain-Source
On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
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BRD100N03
Rev.A .Jun. -2017
DATA SHEET
电参数曲线图
/ Electrical Characteristic Curve
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BRD100N03
Rev.A .Jun. -2017
DATA SHEET
外½尺寸图
/ Package Dimensions
http://www.fsbrec.com
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BRD100N03
Rev.A .Jun. -2017
DATA SHEET
印章说明
/
Marking Instructions
BR
100N03
****

说明:
BR:
100N03:
****:
Note:
BR:
 
100N03:
****:


Company Code
Product Type.
Lot No. Code, code change with Lot No.

为公司代码
为型号代码
为生产批号代码,随生产批号变化。
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