首页 > 器件类别 > 分立半导体 > MOS(场效应管)

BRD15N10

漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):15A(Tc) 栅源极阈值电压:3V @ 250uA 漏源导通电阻:90mΩ @ 8.5A,10V 最大功率耗散(Ta=25°C):39W(Tc) 类型:N沟道

器件类别:分立半导体    MOS(场效应管)   

厂商名称:蓝箭(BLUE ROCKET)

厂商官网:http://www.fsbrec.com/

下载文档
器件参数
参数名称
属性值
漏源电压(Vdss)
100V
连续漏极电流(Id)(25°C 时)
15A(Tc)
栅源极阈值电压
3V @ 250uA
漏源导通电阻
90mΩ @ 8.5A,10V
最大功率耗散(Ta=25°C)
39W(Tc)
类型
N沟道
文档预览
BRD15N10
Rev.F Oct.-2018
DATA SHEET
描述
/
Descriptions
TO-252
塑封封装
N
沟道
MOS
场效应管。N-CHANNEL
MOSFET in a TO-252 Plastic Package.
特征
/ Features
R
DS(on)
小,门电荷½,C
rss
小,开关速度快。
Low R
DS(on)
,low gate charge, low C
rss
, fast switching.
用途
/
Applications
用于½压电路如:½½电路、DC/DC ½换、便携式产品的电源高效½换。
Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency
switching for power management in portable and battery operated products.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
4
1
3
2
PIN1:G
放大及印章代码
PIN 2:D
PIN 3:S
PIN 4:D
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions.
http://www.fsbrec.com
1
/
7
BRD15N10
Rev.F Oct.-2018
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
DSS
I
D
(Tc=25℃)
I
D
(Tc=100℃)
I
DM
V
GS
E
AS
I
AS
P
D
(Tc=25℃)
T
j
T
stg
数值
Rating
100
15
10
60
±20
33
9.1
39
-55½150
单½
Unit
V
A
A
A
V
mJ
A
W
Drain-Source Voltage
Drain Current
Drain Current
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Power Dissipation
Operating and Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
Qg
(10V)
R
DS(on)
V
SD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=10V
R
L
=10Ω
V
DS
=50V
R
GEN
=3Ω
V
DS
=25V
f=1.0MHz
V
GS
=0V
测试条件
Test Conditions
V
GS
=0V
V
DS
=100V
T
J
=125℃
V
GS
=±20V
V
DS
=V
GS
V
DS
=50V
V
GS
=10V
V
GS
=10V
T
J
=125℃
V
GS
=0V
I
S
=17A
V
DS
=0V
I
D
=250μA
I
D
=5A
I
D
=8.5A
1
2.2
5.8
80
152
0.8
1120
57
35
6
2.5
18
2.5
90
I
D
=250μA
V
GS
=0V
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
100
1.0
50
±100
3
V
μA
nA
V
nC
mΩ
V
pF
pF
pF
ns
ns
ns
ns
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Total gate charge
Static Drain-Source
On-Resistance
Drain-Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
http://www.fsbrec.com
2
/
7
BRD15N10
Rev.F Oct.-2018
DATA SHEET
电参数曲线图
/ Electrical Characteristic Curve
http://www.fsbrec.com
3
/
7
BRD15N10
Rev.F Oct.-2018
DATA SHEET
电参数曲线图
/ Electrical Characteristic Curve
http://www.fsbrec.com
4
/
7
BRD15N10
Rev.F Oct.-2018
DATA SHEET
外½尺寸图
/ Package Dimensions
http://www.fsbrec.com
5
/
7
查看更多>