JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
BSR43
TRANSISTOR (NPN)
1. BASE
2. COLLECTOR
3. EMITTER
FEATURES
Low Voltage
High Current
Complement to BSR33
AAPLICATIONS
Thick and Thin-Film Circuits
Telephony and General Industrial Applications
MARKING:AR4
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
90
80
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
h
FE(3)
*
Collector-emitter saturation voltage
V
CE(sat)
*
V
BE(sat)
*
f
T
C
ob
C
ib
Test conditions
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V, I
C
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=500mA
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
V
CE
=10V,I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
BE
=0.5V, I
C
=0, f=1MHz
100
12
90
30
100
50
0.25
0.5
1
1.2
V
V
V
V
MHz
pF
pF
300
Min
90
80
5
100
100
Typ
Max
Unit
V
V
V
nA
nA
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Emitter input capacitance
*Pulse test
A,Nov,2010
电子工程世界
