JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
BUL128D
FEATURES
Electronic Ballasts
for
Flourscent Lighting
Flyback
and
Forward Single Transistor Low Power
Converter
1.BASE
2.COLLECTOR
3.EMITTER
TRANSISTOR (NPN)
TO-220-3L
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Rthj-case
Rthj-amb
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
Junction Temperature
Storage Temperature Range
Value
700
400
9
4
2
1.78
62.5
150
-55-150
Unit
V
V
V
A
W
℃/W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter Sustaining voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector Cut-off Current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE(1)
h
FE(2)
Collector-emitter saturation voltage
V
CE
(sat)
Test
conditions
MIN
700
400
9
0.1
0.1
50
8
10
0.7
1
1.5
0.5
1.1
1.2
1.3
2.5
0.1
0.6
0.2
2
2.9
V
V
µs
µs
µs
µs
V
40
TYP
MAX
UNIT
V
V
V
mA
mA
µA
I
C
= 1mA,I
E
=0
I
C
= 100mA,L=25mH
I
E
= 10mA,I
C
=0
V
CE
= 400V, I
E
=0
V
BE
= -1.5 V, V
CE
= 700 V
V
EB
=7V, I
C
=0
V
CE
= 5V, I
C
= 2 A
V
CE
=5 V, I
C
=10mA
I
C
=0.5A,I
B
=0.1A
I
C
=1A,I
B
=0.2A
I
C
=2.5A,I
B
=0.5A
I
C
=4A,I
B
=1A
I
C
=0.5A,I
B
=0.1A
I
C
=1A,I
B
=0.2A
I
C
=2.5A,I
B
=0.5A
I
F
= 2 A
V
CC
=200V, I
C
=2A
I
B1
=-I
B2
=0.4A
V
CC
=250V, I
C
=2A
I
B1
=-I
B2
=0.4A
Base-emitter saturation voltage
Forward Voltage Drop
Fall time
Storage time
Fall time
Storage time
V
BE
(sat)
V
F
t
f
t
s
t
f
t
s
A,Mar,2011
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