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BZM55-C4V7T/R

Zener Diode, 4.7V V(Z), 5%, 0.5W

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE
二极管类型
ZENER DIODE
最大动态阻抗
60 Ω
元件数量
1
最高工作温度
175 °C
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.5 W
标称参考电压
4.7 V
表面贴装
YES
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
5%
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DATA SHEET
BZM55-C2V4 SERIES
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.4 to 47 Volts
POWER
500 mWatts
MICRO-MELF
Unit : inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
.049(1.25)
.047(1.2)DIA.
MECHANICAL DATA
• Case: Molded Glass MICRO-MELF
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.01 grams
• Mounting Position: Any
• Packing information
T/R - 2.5K per 7" plastic Reel
.043(1.1)
.008(0.2)
.079(2.0)
.071(1.8)
.008(0.2)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
O
Symbol
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
S
C
C
O
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Symbol
Min.
--
--
Typ.
Max.
0.3
1
Uni ts
K/mW
V
RthA
VF
--
--
Vali d provi ded that leads at a di stance of 8mm from case are kept at ambi ent temperature.
STAD-JAN.27.2004
PAGE . 1
Nominal Zener Voltage
Part Number
No m. V
BZM55-C2V4
BZM55-C2V7
BZM55-C3V0
BZM55-C3V3
BZM55-C3V6
BZM55-C3V9
BZM55-C4V3
BZM55-C4V7
BZM55-C5V1
BZM55-C5V6
BZM55-C6V2
BZM55-C6V8
BZM55-C7V5
BZM55-C8V2
BZM55-C9V1
BZM55-C10
BZM55-C11
BZM55-C12
BZM55-C13
BZM55-C15
BZM55-C16
BZM55-C18
BZM55-C20
BZM55-C22
BZM55-C24
BZM55-C27
BZM55-C30
BZM55-C33
BZM55-C36
BZM55-C39
BZM55-C43
BZM55-C47
2.40
2.70
3.00
3.30
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10.00
11.00
12.00
13.00
15.00
16.00
18.00
20.00
22.00
24.00
27.00
30.00
33.00
36.00
39.00
43.00
47.00
Max. Zener Impedance
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
mA
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
Max Reverse
Leakage Current
I
R
@ V
R
uA
50
10
4.0
2.0
2.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.0
7.0
7.5
8.5
9.0
10.0
11.0
12.0
14.0
15.0
17.0
18.0
20.0
22.0
24.0
27.0
30.0
33.0
36.0
V
Z
@ I
ZT
M i n. V
2.28
2.50
2.80
3.10
3.40
3.70
4.00
4.40
4.80
5.20
5.80
6.40
7.00
7.70
8.50
9.40
10.40
11.40
12.40
13.80
15.30
16.80
18.80
20.80
22.80
25.10
28.00
31.00
34.00
37.00
40.00
44.00
M a x. V
2.56
2.90
3.20
3.50
3.80
4.10
4.60
5.00
5.40
6.00
6.60
7.20
7.90
8.70
9.60
10.60
11.60
12.70
14.10
15.60
17.10
19.10
21.20
23.30
25.60
28.90
32.00
35.00
38.00
41.00
46.00
50.00
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
mA
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
Notes.
STANDARD VOLTAGE TOLERANCE IS + 5% AND :
SUFFIX “ A” FOR + 1%
SUFFIX “ B” FOR + 2%
SUFFIX “ C” FOR + 5%
SUFFIX “ D” FOR + 20%
STAD-JAN.27.2004
PAGE . 2
RATING AND CHARACTERISTIC CURVES
POWER DISSIPATION, mWatts
500
400
300
200
100
0
50
100
150
200
O
250
AMBIENT TEMPERATURE, C
FIG. 1 POWER DERATING CURVE
Iz (mA)
50
40
30
20
10
0
5
10
15
20
25
Vz (V)
30
Test Current
Iz = 5mA
27
24
22
12
11
6V8
5V6
5V1
4V7
4V3
3V9
3V3
2V4
15
20
Fig.2 BREAKDOWN CHARACTERISTICS
9V1
STAD-JAN.27.2004
PAGE . 3
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