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BZT52B5V6S

精度:- 稳压值(典型值):5.6V 反向漏电流:1uA @ 2V 最大功率:200mW 5.6V(Nom.),200mW

器件类别:分立半导体    稳压二极管   

厂商名称:台湾美丽微(FMS)

厂商官网:http://www.formosagr.com/

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器件参数
参数名称
属性值
稳压值(典型值)
5.6V
反向漏电流
1uA @ 2V
最大功率
200mW
文档预览
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Typical
Maximum
Maximum Zener Impedance
Zener Voltage Range (Note 2)
Type
Number
Type
Code
V
Z
@I
ZT
Nom(V)
BZT52B2V4S
BZT52B2V7S
BZT52B3V0S
BZT52B3V3S
BZT52B3V6S
BZT52B3V9S
BZT52B4V3S
BZT52B4V7S
BZT52B5V1S
BZT52B5V6S
BZT52B6V2S
BZT52B6V8S
BZT52B7V5S
BZT52B8V2S
BZT52B9V1S
BZT52B10S
BZT52B11S
BZT52B12S
BZT52B13S
BZT52B15S
BZT52B16S
BZT52B18S
BZT52B20S
BZT52B22S
BZT52B24S
BZT52B27S
BZT52B30S
BZT52B33S
BZT52B36S
BZT52B39S
BZT52B
2WX
2W1
2W2
2W3
2W4
2W5
2W6
2W7
2W8
2W9
2WA
2WB
2WC
2WD
2WE
2WF
2WG
2WH
2WI
2WJ
2WK
2WL
2WM
2WN
2WO
2WP
2WQ
2WR
2WS
2WT
2W
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
Min(V)
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
Max(V)
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
0
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
35
Z
ZT
@I
ZT
Z
ZK
@I
ZK
I
ZK
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
I
R
A
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
2 .
(Note )
Current
@I
ZTC
mV/°C
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
3 .4
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
Reverse
Coefficent
I
ZTC
Temperature
Current
Test
Notes: 1. Device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
2. Short duration test pulse used to minimize self-heating effect
3. f = 1kHz
ο¬·²¹ ¿²¼ ½¸¿®¿½¬»®·­¬·½ ½«®ª»­ øÞÆÌëîÞ¨¨¨Í Í»®·»­÷
Zener Characteristics V
Z
Up to 10 V
100
100
Zener Characteristics 11 V to 43 V
T
a
=25
Pulsed
P
D
=200mW
T
a
=25
Pulsed
P
D
=200mW
10
10
1
1
0.5
1
2
3
4
5
6
7
8
9
10
11
0.5
10
15
20
25
30
35
40
45
50
V
Z
, ZENER VOLTAGE (V)
Temperature Coefficients
40
100
Typical Leakage Current
Pulsed
10
V
Z
, ZENER VOLTAGE (V)
TYPICAL T
a
VALUES
35
30
25
20
15
10
5
1E-3
0
0.01
1
FOR BZT52CXXXS SERIES
V
Z
@ I
ZT
0.1
T
a
=100
T
a
=25
-5
0
4
8
12
16
20
24
28
32
36
40
44
1E-4
0
5
10
15
20
25
30
35
40
45
V
Z
, NOMINAL ZENER VOLTAGE (V)
V
Z
, NOMINAL ZENER VOLTAGE (V)
Typical Capacitance
1000
1000
Effect of Zener Voltage on Zener Impedance
T
a
=25
f=1MHz
T
a
=25
I
Z
=1mA
I
Z(AC)
=0.1I
Z(DC)
f=1kHz
0V BIAS
100
100
I
Z
=5mA
1V BIAS
10
BIAS AT
50% OF V
Z
NOM
10
1
1
10
100
1
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
V
Z
, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
)
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