JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
BZT52C2V4-BZT52C43
ZENER DIODE
FEATURES：
Planar Die Construction
350mW
Power Dissipation on Ceramic PCB
General Purpose, Medium Current
Ideally Suited for Automated Assembly Processes
Available in Lead Free Version
SOD-123
Maximum Ratings(T
a
=25℃ unless otherwise specified)
Characteristic
Forward Voltage (Note 2)
Power Dissipation(Note 1)
Thermal Resistance
from
Junction to Ambient
Junction
Temperature
Storage Temperature
@ I
F
= 10mA
Symbol
V
F
P
D
R
θJA
T
J
T
STG
Value
0.9
350
357
150
-55~+150
Unit
V
mW
℃
/W
℃
℃
Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
2. Short duration test pulse used to minimize self-heating effect
3. f=1kH
Z
C,Jan,2014
Electrical Characteristics ( T
a
= 25
℃
unless otherwise specified )
Maximum
Zener Voltage Range (Note 2)
Maximum Zener Impedance
(Note 3)
Reverse
Current
(Note 2)
V
Z
@I
ZT
Nom(V)
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WJ
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
WU
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
Min(V)
2.20
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
Max(V)
2.60
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
100
Z
ZT
@I
ZT
Ω
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
700
Z
ZK
@I
ZK
I
ZK
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
1.0
I
R
uA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
32
Typical
Temperature
Coefficent
@I
ZTC
mV/°C
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
10.0
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
12.0
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
Test
Current
I
ZTC
Type
Number
Type
Code
C,Jan,2014
Typical Characteristics
Zener Characteristics
(
V
Z
Up to 10 V
)
100
100
BZT52C2V4-39
Zener Characteristics
(
11 V to 39 V
)
T
a
=25
℃
Pulsed
T
a
=25
℃
Pulsed
I
Z
, ZENER CURRENT (mA)
P
D
=350mW
I
Z
, ZENER CURRENT (mA)
2.4
P
D
=350mW
10
10
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
20
18
22
30
33
24
27
1
0.5
1
0.5
1
2
3
4
5
6
7
8
9
10
11
10
12
14
16
18
20
22
24
26
28
30
32
34
36
36
38
39
40
42
V
Z
, ZENER VOLTAGE (V)
V
Z
, ZENER VOLTAGE (V)
Temperature Coefficients
40
100
Typical Leakage Current
θ
VZ
, TEMPERATURE COEFFICIENT (mV/
℃
)
35
30
25
20
15
10
5
0
-5
2
TYPICAL T
a
VALUES
FOR BZT52C2V4 SERIES
I
R
, LEAKAGE CURRENT (uA)
10
1
V
Z
@ I
ZT
0.1
0.01
1E-3
T
a
=100
℃
T
a
=25
℃
1E-4
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
0
5
10
15
20
25
30
35
40
V
Z
, NOMINAL ZENER VOLTAGE (V)
V
Z
, NOMINAL ZENER VOLTAGE (V)
Typical Capacitance
1000
1000
Effect of Zener Voltage on Zener Impedance
T
a
=25
℃
T
a
=25
℃
I
Z
=1mA
Z
ZT
, DYNAMIC IMPEDANCE(Ω)
I
Z(AC)
=0.1I
Z(DC)
f=1kHz
C, CAPACITANCE (pF)
0V BIAS
100
1V BIAS
100
I
Z
=5mA
10
BIAS AT
50% OF V
Z
NOM
10
1
1
10
100
1
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
V
Z
, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
400
(mW)
350
POWER DISSIPATION
P
D
300
250
200
150
100
50
0
0
25
50
75
100
125
150
C,Jan,2014
AMBIENT TEMPERATURE
T
a
(
℃
)
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