JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BZT52C2V4S-BZT52C39S
FEATURES
Planar die construction
200mW power dissipation on ceramic PBC
General purpose,
medium
current
Ideally suited for automated assembly processes
Available in
lead
free version
ZENER DIODE
SOD-323
Maximum Ratings
(T
a
=25℃ unless otherwise specified
)
Characteristic
Forward Voltage (Note 2) @ I
F
= 10mA
Power Dissipation(Note 1)
Thermal Resistance
Temperature
Storage Temperature Range
Junction to Ambient
Symbol
V
F
P
D
R
θJA
T
j
T
Value
0.9
200
625
150
- 5~+150
Unit
V
mW
℃/W
℃
℃
D,Jan,2014
Electrical Characteristics(T
a
= 25℃ unless otherwise specified
)
Maximum
Zener Voltage Range (Note 2)
TYPE
Marking
V
Z
@I
ZT
Nom(V)
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
BZT52C4V7S
BZT52C5V1S
BZT52C5V6S
BZT52C6V2S
BZT52C6V8S
BZT52C7V5S
BZT52C8V2S
BZT52C9V1S
BZT52C10S
BZT52C11S
BZT52C12S
BZT52C13S
BZT52C15S
BZT52C16S
BZT52C18S
BZT52C20S
BZT52C22S
BZT52C24S
BZT52C27S
BZT52C30S
BZT52C33S
BZT52C36S
BZT52C39S
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WJ
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
Min(V)
2.20
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
Max(V)
2.60
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
Z
ZT
@I
ZT
Ω
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
Maximum Zener Impedance
(Note 3)
Reverse
Current
(Note 2)
Z
ZK
@I
ZK
I
ZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
I
R
μA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13
14
16
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
Typical
Temperature
Coefficient
@I
ZTC
mV/℃
Test
Current
I
ZTC
Notes: 1. Device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
D,Jan,2014
Typical Characteristics BZT52C2V4S-39S
Zener Characteristics
(
V
Z
Up to 10 V
)
100
100
Zener Characteristics
(
11 V to 39 V
)
T
a
=25
℃
Pulsed
I
Z
, ZENER CURRENT (mA)
T
a
=25
℃
Pulsed
I
Z
, ZENER CURRENT (mA)
P
D
=200mW
2.4
10
10
P
D
=200mW
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
20
18
22
30
33
24
27
1
0.5
1
0.5
1
2
3
4
5
6
7
8
9
10
11
10
12
14
16
18
20
22
24
26
28
30
32
34
36
36
38
39
40
42
V
Z
, ZENER VOLTAGE (V)
V
Z
, ZENER VOLTAGE (V)
Temperature Coefficients
40
100
Typical Leakage Current
θ
VZ
, TEMPERATURE COEFFICIENT (mV/
℃
)
35
30
25
20
15
10
5
0
-5
2
TYPICAL T
a
VALUES
FOR BZT52C2V4S SERIES
I
R
, LEAKAGE CURRENT (uA)
10
1
V
Z
@ I
ZT
0.1
0.01
1E-3
T
a
=100
℃
T
a
=25
℃
1E-4
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
0
5
10
15
20
25
30
35
40
V
Z
, NOMINAL ZENER VOLTAGE (V)
V
Z
, NOMINAL ZENER VOLTAGE (V)
Typical Capacitance
1000
1000
Effect of Zener Voltage on Zener Impedance
T
a
=25
℃
T
a
=25
℃
I
Z
=1mA
Z
ZT
, DYNAMIC IMPEDANCE(Ω)
I
Z(AC)
=0.1I
Z(DC)
f=1kHz
C, CAPACITANCE (pF)
0V BIAS
100
1V BIAS
100
5mA
10
BIAS AT
50% OF V
Z
NOM
10
1
1
10
100
1
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
V
Z
, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
250
(mW)
200
P
D
POWER DISSIPATION
150
100
50
0
0
25
50
75
100
125
150
D,Jan,2014
AMBIENT TEMPERATURE
T
a
(
℃
)
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