BZT52C2V0 THRU BZT52C75
Silicon Planar Zener Diodes
PINNING
Features
• Total power dissipation: max. 500 mW
• Small plastic package suitable for surface mounted design
• Tolerance approximately ± 5%
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P
tot
T
J
T
Stg
Value
500
150
- 55 to + 150
Unit
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at I
F
= 10 mA
Symbol
R
thA
V
F
Max.
340
0.9
Unit
O
C/W
V
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BZT52C2V0 THRU BZT52C75
Characteristics at Ta = 25
O
C
Zener Voltage Range
1)
Type
BZT52C2V0
BZT52C2V2
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
BZT52C47
BZT52C51
BZT52C56
BZT52C62
BZT52C68
BZT52C75
1)
2)
Dynamic Impedance
2)
Z
ZT
(Max.)
Reverse Leakage Current
I
R
(Max.)
μA
120
120
120
120
50
20
10
5
5
2
2
1
1
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
1
1
0.2
0.2
0.2
at V
R
V
0.5
0.7
1
1
1
1
1
1
1
1
1.5
2.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
30
33
36
39
43
47
52
57
V
znom
V
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
l
ZT
for
V
ZT
mA
V
5
1.8...2.15
5
2.08...2.33
5
2.28...2.56
5
2.5...2.9
5
2.8...3.2
5
3.1...3.5
5
3.4...3.8
5
3.7...4.1
5
4...4.6
5
4.4...5
5
4.8...5.4
5
5.2...6
5
5.8...6.6
5
6.4...7.2
5
7...7.9
5
7.7...8.7
5
8.5...9.6
5
9.4...10.6
5
10.4...11.6
5
11.4...12.7
5
12.4...14.1
5
13.8...15.6
5
15.3...17.1
5
16.8...19.1
5
18.8...21.2
5
20.8...23.3
5
22.8...25.6
5
25.1...28.9
5
28...32
5
31...35
5
34...38
2.5
37...41
2.5
40...46
2.5
44...50
2.5
48...54
2.5
52...60
2.5
58...66
2.5
64...72
2.5
70...79
Ω
100
100
100
110
120
130
130
130
130
130
130
80
50
30
30
30
30
30
30
35
35
40
40
45
50
55
60
70
80
80
90
100
130
150
180
180
200
250
300
at I
Z
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
V
Z
is tested with pulses (20 ms).
Z
ZT
is measured at I
Z
by given a very small A.C. current signal.
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BZT52C2V0 THRU BZT52C75
Breakdown characteristics
T
j
= constant (pulsed)
mA
50
Tj=25
o
C
2V7
3V3
3V9
4V7
6V8
Iz
40
8V2
5V6
30
20
10
Test current Iz
5mA
0
0
1
2
3
4
5
6
Vz
7
8
9
10 V
Breakdown characteristics
T
j
= constant (pulsed)
mA
30
10
12
Tj=25
o
C
Iz
15
20
18
22
27
33
10
Test current Iz
5mA
0
0
10
20
Vz
30
40 V
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BZT52C2V0 THRU BZT52C75
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
4 of 4
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