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BZT55C22

Zener Diode, 22V V(Z), 5.669%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, QUADROMELF-2

器件类别:分立半导体    二极管   

厂商名称:台湾光宝(LITEON)

厂商官网:http://optoelectronics.liteon.com/en-global/Home/index

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器件参数
参数名称
属性值
厂商名称
台湾光宝(LITEON)
零件包装代码
MELF
包装说明
O-LELF-R2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
LOW NOISE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JESD-30 代码
O-LELF-R2
元件数量
1
端子数量
2
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
认证状态
Not Qualified
标称参考电压
22 V
表面贴装
YES
技术
ZENER
端子形式
WRAP AROUND
端子位置
END
最大电压容差
5.669%
工作测试电流
5 mA
文档预览
BZT55C2V4 - BZT55C75
500mW SURFACE MOUNT ZENER DIODE
POWER SEMICONDUCTOR
Features
500mW Power Dissipation
High Stability
Low Noise
Outline Similar to JEDEC 213AA
Hemetic Package
A
B
Mechanical Data
Case: QuadroMELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.034 grams (approx.)
QuadroMELF
Dim
A
B
C
D
Min
3.3
1.4
Max
3.7
1.6
1.7∅ Typical
0.3 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Power Dissipation
Zener Current
Thermal Resistance, Junction to Ambient Air
Forward Voltage
Operating and Storage Temperature Range
(Note 1)
(Note 1)
(Note 1)
P
d
I
Z
R
θJA
V
F
@ T
A
= 25°C unless otherwise specified
Value
500
P
d
/V
Z
300
1.5
-65 to +175
Unit
mW
mA
K/W
V
°C
Symbol
@ I
F
= 200mA
T
j,
T
STG
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
2. Tested with pulses, T
p
100ms.
DS30006 Rev. C-2
1 of 3
C
D
BZT55C2V4-BZT55C75
Electrical Characteristics
Zener Voltage Range
(Note 2)
Type
Number
Nom (V)
BZT55C2V4
BZT55C2V7
BZT55C3V0
BZT55C3V3
BZT55C3V6
BZT55C3V9
BZT55C4V3
BZT55C4V7
BZT55C5V1
BZT55C5V6
BZT55C6V2
BZT55C6V8
BZT55C7V5
BZT55C8V2
BZT55C9V1
BZT55C10
BZT55C11
BZT55C12
BZT55C13
BZT55C15
BZT55C16
BZT55C18
BZT55C20
BZT55C22
BZT55C24
BZT55C27
BZT55C30
BZT55C33
BZT55C36
BZT55C39
BZT55C43
BZT55C47
BZT55C51
BZT55C56
BZT55C62
BZT55C68
BZT55C75
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
V
Z
@ I
ZT
Min (V)
2.28
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
@ T
A
= 25°C unless otherwise specified
Test
Current
I
ZT
Maximum Zener Impedance
Z
ZT
@
I
ZT
(Ω)
85
85
90
90
90
90
90
80
60
40
10
8.0
7.0
7.0
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
200
250
Z
ZK
@ I
ZK
(Ω)
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1500
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Maximum Reverse Current
I
R
@
T
A
=25°C
(mA)
50
10
4.0
2.0
2.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
R
@
T
A
=150°C
(mA)
100
50
40
40
40
40
20
10
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
5.0
5.0
5.0
10
10
10
10
10
@ V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
Typical
Temperature
Coefficient
@ I
ZT
(%/K)
-0.09 to -0.06
-0.09 to -0.06
-0.08 to -0.05
-0.08 to -0.05
-0.08 to -0.05
-0.08 to -0.05
-0.06 to - 0.03
-0.05 to +0.02
-0.02 to + 0.02
-0.05 to +0.05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.10
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
Max (V)
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
2. Tested with pulses, T
p
100ms.
DS30006 Rev. C-2
2 of 3
BZT55C2V4-BZT55C75
500
P
d
, TOTAL POWER DISSIPATION (mW)
200
V
R
= 2.0V
T
j
= 25
°
C
C
j
, DIODE CAPACITANCE (pF)
400
150
300
100
200
50
100
0
0
40
80
120
160
200
0
0
5
10
15
20
25
T
A
, AMBIENT TEMPERATURE
Fig.1 Power Dissipation vs Ambient Temperature
V
Z
, ZENER VOLTAGE (V)
Fig. 2 Diode Capacitance vs Zener Voltage
1000
DIFFERENTIAL ZENER RESISTANCE (
)
T
j
= 25
°
C
I
Z
= 1.0mA
100
5.0mA
10
10mA
1
0
5
10
15
20
25
V
Z
, ZENER VOLTAGE (V)
Fig. 3 Differential Zener Impedance
1000
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE (K/W)
100
R
θ
JA
(t) = r(t)
*
R
θ
JA
R
θJA
= 300 K/W
P
(pk)
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
t
1
t
2
T
J
- T
A
= P
PK
*
R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
1.0
0.1
1.0
10
100
1000
t
1
, SQUARE WAVE PULSE DURATION (seconds)
Fig. 4 Typical Normalized Transient Thermal Impedance Curves
DS30006 Rev. C-2
3 of 3
BZT55C2V4-BZT55C75
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