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BZX55-C43

Zener Diode, 43V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, GLASS, DO-35, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:苏州固锝(Good-Ark)

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器件参数
参数名称
属性值
厂商名称
苏州固锝(Good-Ark)
包装说明
O-LALF-W2
Reach Compliance Code
compliant
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
90 Ω
JEDEC-95代码
DO-204AH
JESD-30 代码
O-LALF-W2
元件数量
1
端子数量
2
最高工作温度
175 °C
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
标称参考电压
43 V
表面贴装
NO
技术
ZENER
端子形式
WIRE
端子位置
AXIAL
最大电压容差
5%
工作测试电流
2.5 mA
文档预览
BZX55 Series
Zener Diodes
Zener Voltage Range: 0.8, 2.4 to 200 Volts
Power Dissipation: 500mW
Features
Silicon Planar Power Zener Diodes.
The Zener voltages are graded according to the international
E 24 standard. Standard Zener voltage tolerance is
±
5%.
Replace suffix "C" with "B" for
±
2% tolerance. Other voltage
tolerances and other Zener voltages are available upon
request.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted)
Parameter
Zener current (see Table "Characteristics")
Power dissipation at T
amb
=25
o
C
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
P
tot
R
θ
JA
T
j
T
S
500
300
(1)
Symbol
Value
Unit
mW
o
(1)
C/W
o
175
-55 to +175
C
C
o
Notes:
1. Valid provided that leads at a distance of 3/8" from case are kept at ambient temperature.
493
Electrical Characteristics
(T
A
=25
o
C unless otherwise noted)
Maximum V
F
=1.0V at I
F
=100mA
Temp. coefficient of z ener
voltage at I
Z
=5mA
α
vz (% /
o
C)
Type
number
y=C for
+
5%
y=B for
+
2%
BZX55 - y0V8
BZX55 - y2V4
BZX55 - y2V7
BZX55 - y3V0
BZX55 - y3V3
BZX55 - y3V6
BZX55 - y3V9
BZX55 - y4V3
BZX55 - y4V7
BZX55 - y5V1
BZX55 - y5V6
BZX55 - y6V2
BZX55 - y6V8
BZX55 - y7V5
BZX55 - y8V2
BZX55 - y9V1
BZX55 - y10
BZX55 - y11
BZX55 - y12
BZX55 - y13
BZX55 - y15
BZX55 - y16
BZX55 - y18
BZX55 - y20
BZX55 - y22
BZX55 - y24
BZX55 - y27
BZX55 - y30
BZX55 - y33
BZX55 - y36
BZX55 - y39
BZX55 - y43
BZX55 - y47
BZX55 - y51
BZX55 - y56
BZX55 - y62
BZX55 - y68
BZX55 - y75
BZX55 - y82
BZX55 - y91
BZX55 - y100
BZX55 - y110
BZX55 - y120
BZX55 - y130
BZX55 - y150
BZX55 - y160
BZX55 - y180
BZX55 - y200
(3)
Dynamic resistance
at I
Z
=5mA
f=1kHz
r
z j
(Ω)
<8
< 85
< 85
< 85
< 85
< 85
< 85
< 75
< 60
< 35
< 25
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 300
< 450
< 450
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(6)
(6)
Reverse leakage current
at
T
amb
=25
o
C
I
R
(nA)
-
< 50000
< 10000
< 4000
< 2000
< 2000
< 2000
< 1000
< 500
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
at
T
amb
=150
o
C
I
R
(uA)
-
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
at
V
R
(Volts)
-
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
at I
Z
=1mA
f=1kHz
r
z j
(Ω)
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
< 2000
< 5000
< 5000
(5)
(5)
(5)
(5)
(5)
(5)
(5)
(5)
(5)
(7)
(7)
Min.
- 0.25
- 0.08
- 0.08
- 0.08
- 0.08
- 0.08
- 0.07
- 0.04
- 0.03
- 0.02
- 0.01
0
+ 0.01
+ 0.01
+ 0.01
+ 0.02
+ 0.03
+ 0.03
+ 0.03
+ 0.03
+ 0.03
+ 0.03
+ 0.03
+ 0.03
+ 0.03
+ 0.04
+ 0.04
+ 0.04
+ 0.04
+ 0.04
+ 0.04
+ 0.04
+ 0.04
+ 0.04
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
Max.
-
- 0.06
- 0.06
- 0.06
- 0.05
- 0.04
- 0.03
- 0.01
+ 0.01
+ 0.05
+ 0.06
+ 0.07
+ 0.08
+ 0.09
+ 0.09
+ 0.10
+ 0.11
+ 0.11
+ 0.11
+ 0.11
+ 0.11
+ 0.11
+ 0.11
+ 0.11
+ 0.11
+ 0.12
+ 0.12
+ 0.12
+ 0.12
+ 0.12
+ 0.12
+ 0.12
+ 0.12
+ 0.12
Admissible
z en er
current
(2)
I
ZM
(mA)
-
145
135
125
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
7.0
6.4
5.9
5.3
4.8
4.4
4.0
-
-
-
-
-
-
-
< 600
< 800
< 950
< 1250
< 1400
< 1700
< 2000
< 5000
< 5500
< 6000
< 6500
< 7000
< 8500
< 10000
Notes:
1. Tested with pulses t
p
=5 ms
2. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
3. The BZX55 - C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the
cathode lead to the negative pole.
4. at I
Z
=2.5 mA
5. at I
Z
=0.5 mA
6. at I
Z
=1.0 mA
7. at I
Z
=0.1 mA
494
Electrical Characteristics
(T
A
=25
o
C unless otherwise noted)
Maximum V
F
=1.0V at I
F
=100mA
Zener voltage
range
(1)
at I
ZT1
(mA)
V
Z
(Volts)
Min.
(3)
Type
number
+
5% Tol.
BZX55-C0V8
BZX55-C2V4
BZX55-C2V7
BZX55-C3V0
BZX55-C3V3
BZX55-C3V6
BZX55-C3V9
BZX55-C4V3
BZX55-C4V7
BZX55-C5V1
BZX55-C5V6
BZX55-C6V2
BZX55-C6V8
BZX55-C7V5
BZX55-C8V2
BZX55-C9V1
BZX55-C10
BZX55-C11
BZX55-C12
BZX55-C13
BZX55-C15
BZX55-C16
BZX55-C18
BZX55-C20
BZX55-C22
BZX55-C24
BZX55-C27
BZX55-C30
BZX55-C33
BZX55-C36
BZX55-C39
BZX55-C43
BZX55-C47
BZX55-C51
BZX55-C56
BZX55-C62
BZX55-C68
BZX55-C75
BZX55-C82
BZX55-C91
BZX55-C100
BZX55-C110
BZX55-C120
BZX55-C130
BZX55-C150
BZX55-C160
BZX55-C180
BZX55-C200
Notes:
Max.
0.83
2.56
2.90
3.20
3.50
3.90
4.10
4.60
5.00
5.40
6.00
6.60
7.20
7.90
8.70
9.60
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
87.0
96.0
106
116
127
141
156
171
191
212
Test current
I
ZT1
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Type
number
+
2% Tol.
BZX55-B0V8
BZX55-B2V7
BZX55-B3
BZX55-B3V0
BZX55-B3V3
BZX55-B3V6
BZX55-B3V9
BZX55-B4V3
BZX55-B4V7
BZX55-B5V1
BZX55-B5V6
BZX55-B6V2
BZX55-B6V8
BZX55-B7V5
BZX55-B8V2
BZX55-B9V1
BZX55-B10
BZX55-B11
BZX55-B12
BZX55-B13
BZX55-B15
BZX55-B16
BZX55-B18
BZX55-B20
BZX55-B22
BZX55-B24
BZX55-B27
BZX55-B30
BZX55-B33
BZX55-B36
BZX55-B39
BZX55-B43
BZX55-B47
BZX55-B51
BZX55-B56
BZX55-B62
BZX55-B68
BZX55-B75
BZX55-B82
BZX55-B91
BZX55-B100
BZX55-B110
BZX55-B120
BZX55-B130
BZX55-B150
BZX55-B160
BZX55-B180
BZX55-B200
(3)
Zener voltage
range
(1)
at I
ZT1
(mA)
V
Z
(Volts)
Min.
0.78
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50.0
54.9
60.8
66.6
73.5
80.4
89.2
98.0
108
118
127
147
157
176
196
Max.
0.82
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52.0
56.9
63.2
69.4
76.5
83.6
92.8
102
112
122
133
153
163
184
204
Test current
I
ZT1
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.73
2.28
2.50
2.80
3.10
3.40
3.70
4.00
4.40
4.80
5.20
5.80
6.40
7.00
7.70
8.50
9.40
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
77.0
85.0
94.0
104
114
124
138
153
168
188
1. Measured with pulses t
p
=5 ms
2. The BZX55 - C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the
cathode lead to the negative pole.
495
RATINGS AND CHARACTERISTIC CURVES
(T
A
= 25
o
C unless otherwise noted)
496
RATINGS AND CHARACTERISTIC CURVES
(T
A
= 25
o
C unless otherwise noted)
497
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