BZX55C2V4~BZX55C100
AXIAL LEAD ZENER DIODES
VOLTAGE
2.4 to 100 Volts
POWER
500 mWatts
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Molded glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix :” -35” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
O
Symbol
3.0
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
s
C
C
O
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage at I
F
= 100mA
Symbol
Min.
--
--
Typ.
Max.
0.3
1
Units
K/mW
V
R
θ
JA
V
F
--
--
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
STAD-FEB.10.2009
1
PAGE . 1
BZX55C2V4~BZX55C100
Nomi nal Zener Voltage
Part Number
No m. V
BZX55C 2V4
BZX55C 2V7
BZX55C 3V0
BZX55C 3V3
BZX55C 3V6
BZX55C 3V9
BZX55C 4V3
BZX55C 4V7
BZX55C 5V1
BZX55C 5V6
BZX55C 6V2
BZX55C 6V8
BZX55C 7V5
BZX55C 8V2
BZX55C 9V1
BZX55C 10
BZX55C 11
BZX55C 12
BZX55C 13
BZX55C 15
BZX55C 16
BZX55C 18
BZX55C 20
BZX55C 22
BZX55C 24
BZX55C 27
BZX55C 30
BZX55C 33
BZX55C 36
BZX55C 39
BZX55C 43
BZX55C 47
BZX55C 51
BZX55C 56
BZX55C 62
BZX55C 68
BZX55C 75
BZX55C 82
BZX55C 91
BZX55C 100
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
V
Z
@ I
ZT
M i n. V
2.28
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
M a x. V
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
Ω
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
200
250
300
450
450
Max. Zener Impedance
Z
ZT
@ I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
1
Ω
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1500
2000
5000
5000
Z
ZK
@ I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.1
0.1
uA
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Max Reverse
Leakage C urrent
I
R
@ V
R
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6
7
8
9
9
10
11
12
14
15
17
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
BZX55C 2V4
BZX55C 2V7
BZX55C 3V0
BZX55C 3V3
BZX55C 3V6
BZX55C 3V9
BZX55C 4V3
BZX55C 4V7
BZX55C 5V1
BZX55C 5V6
BZX55C 6V2
BZX55C 6V8
BZX55C 7V5
BZX55C 8V2
BZX55C 9V1
BZX55C 10
BZX55C 11
BZX55C 12
BZX55C 13
BZX55C 15
BZX55C 16
BZX55C 18
BZX55C 20
BZX55C 22
BZX55C 24
BZX55C 27
BZX55C 30
BZX55C 33
BZX55C 36
BZX55C 39
BZX55C 43
BZX55C 47
BZX55C 51
BZX55C 56
BZX55C 62
BZX55C 68
BZX55C 75
BZX55C 82
BZX55C 91
BZX55C 100
marki ng
co d e
STANDARD VOLTAGE TOLERANCE IS + 5% AND:
SUFFIX “A” FOR + 1%
SUFFIX “B” FOR + 2%
SUFFIX “C” FOR + 5%
SUFFIX “D” FOR + 20%
* MEASURED WITH PULSES Tp=40 mSec.
STAD-FEB.10.2009
1
ZENERDIODENUMBERINGSYSTEM:
BZX55
C3V6
1*
2*
1* TYPE NO.
2* VZ OF ZENER DIODE, V CODE IS INSTEAD OF DECIMAL POINT.
3* e.g., 3V6=3.6V
* MEASURED WITH PULSES Tp=40 mSec.
PAGE . 2
BZX55C2V4~BZX55C100
RATING AND CHARACTERISTIC CURVES
POWER DISSIPATION, mWatts
500
400
300
200
100
0
50
100
150
200
O
250
AMBIENT TEMPERATURE, C
FIG. 1 POWER DERATING CURVE
Vz (V)
Iz (mA)
50
40
30
20
10
0
5
10
15
20
25
30
Test Current
Iz = 20mA
12
11
9.1
15
6.8
6.2
5.6
5.1
4.7
4.3
20
24
3.9
2.7
Fig.2 BREAKDOWN CHARACTERISTICS
STAD-FEB.10.2009
1
PAGE . 3
电子工程世界
综合技术交流
