BZX55C
Silicon Planar Zener Diodes
The Zener voltages are graded according to the
international E24 standard. Other tolerances and
higher Zener voltages are upon request.
Max. 0.5
Max. 0.45
Max. 1.9
Min. 27.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
Black
Cathode Band
XXX
ST
Max. 3.9
Black
Part No.
XXX
Max. 2.9
Absolute Maximum Ratings (T
a
= 25℃)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
Characteristics at T
a
= 25℃
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 100 mA
1)
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
S
®
H
C
E
T
M
E
Min. 27.5
Min. 27.5
Glass Case DO-35
Dimensions in mm
Glass Case DO-34
Dimensions in mm
Symbol
P
tot
T
j
Value
500
1)
175
Unit
℃
mW
℃
T
stg
- 55 to + 175
Parameter
Symbol
R
thA
V
F
Max.
Unit
0.3
1)
1
K/mW
V
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
Dated : 02/09/2013 Rev : 01
BZX55C
Zener Voltage Range
Type
BZX55C0V8
BZX55C2V0
BZX55C2V2
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX55C62
BZX55C68
BZX55C75
BZX55C82
1)
2)
1)
Dynamic Resistance
Z
ZT
Max. (Ω)
8
85
85
85
85
85
85
85
85
75
Z
ZK
Max. (Ω)
50
600
600
600
600
600
600
600
600
600
at I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
Reverse Leakage Current
T
a
=25℃
Max. (µA)
-
100
75
50
10
4
2
2
2
1
T
a
=125℃
Max. (µA)
-
200
160
100
50
40
40
40
40
20
2
2
I
R
at V
R
(V)
-
1
1
1
1
1
1
1
1
1
Temp. Coefficient
of Zener Voltage
TKvz (%/K)
-0.26...-0.23
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.06...-0.03
V
znom
(V)
0.8
2
2.2
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
V
ZT
(V)
0.73...0.83
1.8...2.15
2.08...2.33
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
4.4...5
5.2...6
at I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
S
®
H
C
E
T
M
E
5
5
60
25
8
7
600
450
1
1
0.5
0.1
10
2
1
-0.05...+0.02
4.8...5.4
5.8...6.6
6.4...7.2
7...7.9
7.7...8.7
8.5...9.6
5
5
5
5
5
35
10
7
550
200
50
1
1
0.1
0.1
1
2
-0.02...+0.02
0.03...0.06
1
-0.05...+0.05
0.03...0.07
150
50
1
0.1
2
3
5
1
0.1
2
5
0.03...0.07
1
0.1
2
6.2
0.03...0.08
0.03...0.1
10
50
1
0.1
2
6.8
0.03...0.09
9.4...10.6
5
15
70
1
0.1
2
7.5
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
77…87
5
5
5
5
5
5
5
5
5
5
20
20
26
30
40
50
55
55
80
80
70
90
1
1
0.1
0.1
2
2
8.2
9.1
10
11
12
13
15
16
18
20
0.03...0.11
0.03...0.11
110
110
170
170
220
220
220
220
1
1
1
1
1
1
1
1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
2
2
2
2
2
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.04...0.12
0.04...0.12
0.04...0.12
5
5
5
80
80
80
220
220
220
1
1
1
0.1
0.1
0.1
2
2
2
22
24
27
0.04...0.12
0.04...0.12
0.04...0.12
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
90
90
500
500
0.5
0.5
0.1
0.1
5
5
30
33
0.04...0.12
0.04...0.12
110
125
135
150
200
250
300
600
700
700
1000
1000
1000
1500
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.1
0.1
0.1
0.1
0.1
0.1
0.1
5
10
10
10
10
10
10
36
39
43
47
51
56
62
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.05…0.12
Dated : 02/09/2013 Rev : 01
Tested with pulses t
p
= 20 ms.
2)
The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the
cathode lead to the negative pole.
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
BZX55C
S
®
H
C
E
T
M
E
Dated : 02/09/2013 Rev : 01
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
电子工程世界
综合技术交流
