JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-723 Plastic-Encapsulate Diodes
BZX784C2V4-BZX784C39
ZENER DIODE
SOD-723
+
FEATURES
• Planar Die Construction
•
150mW Power Dissipation
•
Zener Voltages from 2.4 – 39V
• Ideally Suited for Automated Assembly Processes
-
Maximum Ratings(T
a
= 25℃ unless otherwise specified)
Characteristic
Forward Voltage
Power Dissipation
(Note 1)
Thermal Resistance
from
Junction to Ambient
Operating
Junction
Temperature
Storage Temperature
Range
Symbol
V
F
P
D
R
θJA
T
J
T
STG
Value
0.9
150
150
-55~+150
Unit
V
mW
℃/W
℃
℃
A,Otc,2011
Electrical Characteristics
(T
a
=
25
℃
unless otherwise specitied )
Maximum
Reverse
Current
I
R
(uA)
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
Typical temperature
coefficient
@ I
ZT
mV/°C
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
Type
Number
Type
Code
Zener Voltage Range (Note 2)
Maximum Zener Impedance
(Note 3)
I
ZT
Z
ZT
@I
ZT
(Ω)
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
Z
ZK
@I
ZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
V
Z
@I
ZT
Nom(V)
Min(V)
2.20
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
Max(V)
2.60
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
BZX784C2V4
BZX784C2V7
BZX784C3V0
BZX784C3V3
BZX784C3V6
BZX784C3V9
BZX784C4V3
BZX784C4V7
BZX784C5V1
BZX784C5V6
BZX784C6V2
BZX784C6V8
BZX784C7V5
BZX784C8V2
BZX784C9V1
BZX784C10
BZX784C11
BZX784C12
BZX784C13
BZX784C15
BZX784C16
BZX784C18
BZX784C20
BZX784C22
BZX784C24
BZX784C27
BZX784C30
BZX784C33
BZX784C36
BZX784C39
Z1
Z2
Z3
Z4
Z5
Z6
Z7
X1
X2
X3
X4
X5
X6
X7
X8
X9
W1
W2
W3
W4
W5
W6
W7
W8
W9
Y1
Y2
Y3
Y4
Y5
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2.Tested with pulses, period=5ms,pulse width =300μs.
3.f = 1KH
Z
.
A,Otc,2011
电子工程世界
综合技术交流
